SEMIHOW HFB1N60

BVDSS = 600 V
RDS(on) typ = 9.5 Ω
HFB1N60
ID = 0.4 A
600V N-Channel MOSFET
TO-92
FEATURES
1
 Originative New Design
2
3
1.Gate 2. Drain 3. Source
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
D
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 4.0 nC (Typ.)
 Extended Safe Operating Area
G
 Lower RDS(ON) : 9.5 Ω (Typ.) @VGS=10V
 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
S
TC=25℃ unless otherwise specified
Parameter
Value
Units
600
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25℃)
0.4
A
Drain Current
– Continuous (TC = 100℃)
0.25
A
IDM
Drain Current
– Pulsed
1.6
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
50
mJ
IAR
Avalanche Current
(Note 1)
0.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TA = 25℃)
1.0
W
Power Dissipation (TC = 25℃)
- Derate above 25℃
3.0
W
0.02
W/℃
-55 to +150
℃
300
℃
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RθJL
Junction-to-Lead
--
40
RθJA
Junction-to-Ambient
--
120
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2007
HFB1N60
Nov 2007
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.2 A
--
9.5
12
Ω
VGS = 0 V, ID = 250 ㎂
600
--
--
V
ID = 250 ㎂, Referenced to25℃
--
0.65
--
V/℃
VDS = 600 V, VGS = 0 V
--
--
1
㎂
VDS = 480 V, TC = 125℃
--
--
10
㎂
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
Coefficient
/ΔTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
㎁
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
㎁
--
155
200
㎊
--
24
31
㎊
--
6.0
7.5
㎊
--
12
30
㎱
--
40
140
㎱
--
20
60
㎱
--
30
80
㎱
--
4.0
5.0
nC
--
1.0
--
nC
--
2.0
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 0.9 A,
RG = 25 Ω
(Note 4,5)
VDS = 480 V, ID = 0.9 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
0.4
ISM
Pulsed Source-Drain Diode Forward Current
--
--
1.6
VSD
Source-Drain Diode Forward Voltage
IS = 0.4 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
160
--
㎱
Qrr
Reverse Recovery Charge
IS = 0.9 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
0.45
--
μC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=115mH, IAS=0.9A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤0.4A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Nov 2007
HFB1N60
Electrical Characteristics TC=25 °C
HFB1N60
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
200
150
Coss
100
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
50
VGS, Gate-Source Voltage [V]
250
VDS = 120V
10
VDS = 300V
8
VDS = 480V
6
4
2
* Notes : ID = 0.9 A
0
-1
10
0
0
10
1
10
0
1
2
3
4
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
5
◎ SEMIHOW REV.A0,Nov 2007
HFB1N60
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Nov 2007
HFB1N60
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
◎ SEMIHOW REV.A0,Nov 2007
HFB1N60
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,Nov 2007
HFB1N60
Package Dimension
TO-92
3.71±0.2
4.58±0.25
3°
4.58±0.25
4°
14.47±0.5
0.46±0.1
1.27typ
3.6±0.25
1.02±0.1
3.71±0.25
1.27typ
◎ SEMIHOW REV.A0,Nov 2007
HFB1N60
W0
W
W1
H0
H
W2
H1
TO-92 TAPING
D
0
F1
F2
P1
P2
P
Dimension [mm]
Item
Symbol
Reference
Tolerance
Component pitch
P
12.7
±0.5
Side lead to center of feed hole
P1
3.85
±0.5
Center lead to center of feed hole
P2
6.35
±0.5
FI,F2
2.5
+0.2/-0.1
Carrier Tape width
W
18.0
+1.0/-0.5
Adhesive tape width
W0
6.0
±0.5
Tape feed hole location
W1
9.0
±0.5
Adhesive tape position
W2
Lead pitch
1.0 MAX
Center of feed hole to bottom of component
H
19.5
±1
Center of feed hole to lead form
H0
16.0
±0.5
Component height
H1
Tape feed hole diameter
D0
27.0 max
4.0
±0.2
◎ SEMIHOW REV.A0,Nov 2007