BVDSS = 600 V RDS(on) typ = 10 Ω HFB1N60S ID = 0.3 A 600V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 1.Gate 2. Drain 3. Source Superior Avalanche Rugged Technology Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area G Lower RDS(ON) : 10 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol S TC=25℃ unless otherwise specified Parameter Value Units 600 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 0.3 A Drain Current – Continuous (TC = 100℃) 0.18 A IDM Drain Current – Pulsed 1.2 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 33 mJ IAR Avalanche Current (Note 1) 0.3 A EAR Repetitive Avalanche Energy (Note 1) 0.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25℃) 0.9 W Power Dissipation (TL = 25℃) - Derate above 25℃ 2.5 W 0.02 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJL Junction-to-Lead -- 50 RθJA Junction-to-Ambient -- 140 Units ℃/W ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Sep 2009 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 0.15 A -- 10 12 Ω 600 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.6 -- V/℃ VDS = 600 V, VGS = 0 V -- -- 50 ㎂ VDS = 480 V, TC = 125℃ -- -- 250 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 ㎂ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 130 170 ㎊ -- 22 29 ㎊ -- 5.0 6.5 ㎊ -- 7 24 ㎱ -- 21 52 ㎱ -- 13 36 ㎱ -- 27 64 ㎱ -- 3.0 4.0 nC -- 0.5 -- nC -- 1.3 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 1.0 A, RG = 25 Ω (Note 4,5) VDS = 480 V, ID = 1.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 0.3 ISM Pulsed Source-Drain Diode Forward Current -- -- 1.2 VSD Source-Drain Diode Forward Voltage IS = 0.3 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 190 -- ㎱ Qrr Reverse Recovery Charge IS = 1.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 0.53 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=59mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤0.3A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Electrical Characteristics TC=25 °C HFB1N60S ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 25 IDR, Reverse Drain Current [A] RDS(ON)[Ω], Drain-Source On-Resistance 30 VGS = 10V 20 15 VGS = 20V 10 5 * Note : TJ = 25oC 0 0.0 0.5 1.0 1.5 2.0 2.5 ID, Drain Current[A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 200 150 Ciss 100 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz 50 Crss 12 VGS, Gate-Source Voltage [V] 250 10 VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 * Note : ID = 1A 0 10-1 100 101 0 0 1 2 3 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 4 ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Typical Characteristics (continued) RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 3.0 2.5 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 0.15 A 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature ID, Drain Current [A] ID, Drain Current [A] 0.3 0.2 0.1 0.0 25 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature ZθJL(t), Thermal Response Figure 9. Maximum Safe Operating Area t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S Package Dimension TO-92 3.71±0.2 4.58±0.25 3° 4.58±0.25 4° 14.47±0.5 0.46±0.1 1.27typ 3.6±0.25 1.02±0.1 3.71±0.25 1.27typ ◎ SEMIHOW REV.A0,Sep 2009 HFB1N60S W0 W W1 H0 H W2 H1 TO-92 TAPING D 0 F1 F2 P1 P2 P Dimension [mm] Item Symbol Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6.35 ±0.5 FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive tape position W2 Lead pitch 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 Tape feed hole diameter D0 27.0 max 4.0 ±0.2 ◎ SEMIHOW REV.A0,Sep 2009