SEMTECH_ELEC BAS81

BAS81
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
VRRM
40
V
IF
30
mA
Repetitive Peak Forward Current tp≦1s; δ≦0.5
IFRM
150
mA
Repetitive Peak Forward Current tp=1s
IFSM
500
mA
Junction Temperature
Tj
125
O
Storage Temperature Range
TS
-65 to +150
O
Symbol
Value
Unit
Rthj-a
320
K/W
Peak Reverse Voltage
Continuous Forward Current
Thermal Resistance from Junction to Ambient
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/12/2004
BAS81
Characteristics at Tamb = 25oC
Forward Voltage
at IF = 0.1mA
at IF = 1mA
at IF = 15mA
Symbol
Min.
Typ.
Max.
Unit
VF
VF
VF
-
-
0.33
0.41
1
V
V
V
IR
-
-
200
nA
Ctot
-
-
1.6
pF
Leakage Current
at VR = VRMAX
Junction Capacitance
at VR = 2V, f = 1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/12/2004
BAS81
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/12/2004