BAS81 SILICON SCHOTTKY BARRIER DIODES for general purpose applications Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit VRRM 40 V IF 30 mA Repetitive Peak Forward Current tp≦1s; δ≦0.5 IFRM 150 mA Repetitive Peak Forward Current tp=1s IFSM 500 mA Junction Temperature Tj 125 O Storage Temperature Range TS -65 to +150 O Symbol Value Unit Rthj-a 320 K/W Peak Reverse Voltage Continuous Forward Current Thermal Resistance from Junction to Ambient C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/12/2004 BAS81 Characteristics at Tamb = 25oC Forward Voltage at IF = 0.1mA at IF = 1mA at IF = 15mA Symbol Min. Typ. Max. Unit VF VF VF - - 0.33 0.41 1 V V V IR - - 200 nA Ctot - - 1.6 pF Leakage Current at VR = VRMAX Junction Capacitance at VR = 2V, f = 1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/12/2004 BAS81 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/12/2004