BAV101~BAV103 SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 120 200 250 V VR 100 150 200 V IF 250 mA IFRM 625 mA IFSM 3 1 A Total Power Dissipation Ptot 400 mW Thermal Resistance, Junction to Ambient RθJA 300 K/W Tj 175 O Tstg - 65 to + 175 O Symbol Max. Unit VF 1 1.25 V 100 100 100 100 100 100 nA nA nA µA µA µA Repetitive Peak Reverse Voltage Reverse Voltage BAV101 BAV102 BAV103 BAV101 BAV102 BAV103 Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 100 µs at t = 1 s Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 200 mA Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V at VR = 100 V, Tj = 150 OC at VR = 150 V, Tj = 150 OC at VR = 200 V, Tj = 150 OC BAV101 BAV102 BAV103 BAV101 BAV102 BAV103 IR Diode Capacitance at f = 1 MHz, VR = 0 Cd 5 pF Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω trr 50 ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/11/2008 BAV101~BAV103 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/11/2008