BAV74 SILICON PLANAR DUAL SWITCHING DIODE High Speed Switching Dual Diodes 3 2 1 Marking Code: A4 SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 60 V VR 50 V IF 215 125 mA IFRM 450 mA IFSM 4 1 0.5 A Power Dissipation Pd 350 mW Operating Junction Temperature Range TJ 150 O Storage Temperature Range TS - 55 to + 150 O Symbol Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF 715 855 1 1.25 mV mV V V Reverse Current at VR = 25 V at VR = 50 V at VR = 25 V, TJ = 150 OC at VR = 50 V, TJ = 150 OC IR IR IR IR 30 0.1 30 100 nA µA µA µA Cd 2 pF trr 4 ns Peak Repetitive Reverse Voltage Continuous Reverse Voltage Forward Current (DC) Single Diode Loaded Double Diode Loaded Repetitive Peak Forward Current Non-Repetitive Peak Forward Current at t = 1 μs at t = 1 ms at t = 1 s C C Characteristics at Ta = 25 OC Parameter Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA to IR = 1 mA, RL = 100 Ω SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008 BAV74 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008