SEMTECH_ELEC BC846

BC846 … BC850
NPN Silicon Epitaxial Transistor
for switching and amplifier applications
As complementary types the PNP transistors
BC856...BC860 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Units
Collector Base Voltage
BC846
BC847, BC850
BC848, BC849
VCBO
VCBO
VCBO
80
50
30
V
V
V
Collector Emitter Voltage
BC846
BC847, BC850
BC848, BC849
VCEO
VCEO
VCEO
65
45
30
V
V
V
Emitter Base Voltage
BC846, BC847
BC848, BC849, BC850
VEBO
VEBO
6
5
V
V
Collector Current
IC
100
mA
Peak Collector Current
ICM
200
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
TJ
150
O
Storage Temperature Range
TS
- 65 to + 150
O
C
C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/06/2006
BC846 … BC850
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Units
hFE
hFE
hFE
110
200
420
-
220
450
800
-
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
-
-
250
600
mV
mV
Base Emitter On Voltage
at IC = 2 mA, VCE = 5 V
at IC = 10 mA, VCE = 5 V
VBE(on)
VBE(on)
580
-
-
700
720
mV
mV
ICBO
-
-
15
nA
fT
-
300
-
MHz
Cob
-
-
6
pF
Cib
-
9
-
pF
NF
NF
NF
NF
-
-
10
4
4
3
dB
dB
dB
dB
DC Current Gain
at VCE = 5 V, IC = 2 mA
A
B
C
Collector Cutoff Current
at VCB = 30 V
Current Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
Output Capacitance
at VCB = 10 V, f = 1 MHz
Input Capacitance
at VEB = 0.5 V, f = 1 MHz
Noise Figure
at IC = 200 µA, VCE = 5 V,
RG = 2 KΩ, f = 1 KHz
at IC = 200 µA,VCE = 5 V,
RG = 2 KΩ, f = 30 ~15 KHz
BC846, BC847, BC848
BC849, BC850
BC849
BC850
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/06/2006
BC846 … BC850
STATIC CHARACTERISTIC
BASE-EMITTER ON VOLTAGE
100
I B =400 A
I B =350 A
80
I B =300 A
I B =250 A
60
I B =200 A
I B =150 A
40
I B =100 A
20
I B =50 A
I C(mA),COLLECTOR CURRENT
I C(mA),COLLECTOR CURRENT
100
VCE=2V
10
1
0.1
0
0
4
8
12
16
0.2
0.4
0.6
0.8
1.0
1.2
20
VBE (V),BASE-EMITTER VOLTAGE
VCE(V),COLLECTOR-EMITTER VOLTAGE
10000
h FE DC CURRENT GAIN
VCE=5V
1000
100
10
1
10
100
1000
I C(mA),COLLECTOR CURRENT
fT(MHz), CURRENT GAIN-BANDWIDTH PRODUCT
CURRENT GAIN BANDWIDTH PRODUCT
DC CURRENT GAIN
VCE=5V
100
10
1
0.1
1
10
100
I C(mA),COLLECTOR CURRENT
COLLECTOR OUTPUT CAPACITANCE
100
I C=10I B
f=1MHz
Cob(pF), CAPACITANCE
VBE(sat) ,VCE(sat),(V) SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10000
1000
1000
VBE(sat)
100
10
1
VCE(sat)
10
0.1
1
10
100
1000
I C(mA),COLLECTOR CURRENT
1
10
100
1000
VCB(V),COLLECTOR-BASE VOLTAGE
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/06/2006