MMBT491A NPN Silicon Epitaxial Planar Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Pulse Current ICM 2 A Power Dissipation Ptot 200 mW Junction Temperature TJ 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 500 mA at VCE = 5 V, IC = 1 A Collector Base Cutoff Current at VCB = 30 V Collector Emitter Cutoff Current at VCE = 30 V Emitter Base Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA at IC = 1 A, IB = 100 mA Base Emitter Saturation Voltage at IC = 1 A, IB = 100 mA Base Emitter Voltage at IC = 1 A, VCE = 5 V Collector Output Capacitance at VCB = 10 V, f = 1 MHz Gain Bandwidth Product at VCE = 10 V, IC = 50 mA, f = 100 MHz Symbol Min. Max. Unit hFE hFE hFE 300 300 200 900 - - ICBO - 100 nA ICES - 100 nA IEBO - 100 nA VCEsat - 0.3 0.5 V VBEsat - 1.2 V VBE - 1.1 V Cob - 10 pF fT 150 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/09/2008 MMBT491A SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/09/2008