MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 70 120 200 350 25 - 140 240 400 700 - - Collector Saturation Voltage at IC=100mA, IB=10mA VCE(sat) - - 0.25 V Base Saturation Voltage at IC=100mA, IB=10mA VBE(sat) - - 1 V Collector Cutoff Current at VCB=60V at VEB=5V ICBO IEBO - - 0.1 0.1 µA µA Gain Bandwidth Product at VCE=10V, IC=1mA fT 80 - - MHz Output Capacitance at VCB=10V, f=1MHz COB - 2 3 pF Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩat NF - 1 1 dB DC Current Gain at VCE=6V, IC=2mA Current Gain Group at VCE=6V, IC=150mA O Y G L SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 MMBTSC1815 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005