MMBTSC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 4 V Collector Current IC 50 mA Base Current IB 10 mA Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Current Gain Group Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 1 mA Output Capacitance at VCB = 10 V, f = 1 MHz Power Gain at VCE = 6 V, -IE = 1 mA, f = 10.7 MHz R O Y Symbol Min. Typ. Max. Unit hFE hFE hFE 40 70 120 - 80 140 240 - ICBO - - 0.1 µA IEBO - - 0.1 µA VCE(sat) - - 0.4 V VBE(sat) - - 1 V fT 100 - 400 MHz Cob - 2 3.2 pF Gpe 27 30 33 dB SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/05/2006 MMBTSC2715 Ic[mA], COLLECTOR CURRENT 10 1000 I B =90 A VCE=12V I B =80 A 8 6 h FE , DC CURRENT GAIN I B =70 A I B =60 A I B =50 A 4 I B =40 A I B =30 A 2 I B =20 A I B =10 A 100 0 0 2 4 6 8 10 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat) VCE(sat) 0.1 0.01 0.1 1 24 20 16 12 8 4 0 10 VCE=12V 28 0 0.2 Ic[mA], COLLECTOR CURRENT 0.6 0.8 1.0 1.2 f=1MHz I E =0 1 0.1 100 Figure 4. Base-Emitter On Voltage fT [ MHz ] , CURRENT GAIN BANDWIDTH PRODUCT Cob [ pF ] , CAPACITANCE 10 10 0.4 VBE [V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Satruation Voltage 1 100 32 Ic=10I B 1 10 Figure 2. DC Current Gain Ic[mA], COLLECTOR CURRENT VBE(sat) , VCE(sat) [ V ] , SATURATION VOLTAGE Figure 1. Static Characteristic 10 1 I C[mA], COLLECTOR CURRENT 1000 VCE=10V 100 10 VCB[V], COLLECTOR BASE VOLTAGE Figure 5. Collector Output Capacitance 1 10 I C[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/05/2006