MMBT28S NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current ICM 1.25 A Base Current IB 100 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005 MMBT28S Characteristics at Ta =25 OC Symbol Min. Max. Unit at VCE=1V, IC=5mA hFE 45 - - at VCE=1V, IC=100mA hFE 200 1000 - at VCE=1V, IC=800mA hFE 40 - - V(BR)CBO 40 - V V(BR)CEO 20 - V V(BR)EBO 6 - V ICBO - 100 nA IEBO - 100 nA VCE(sat) - 0.55 V VBE(sat) - 1.2 V VBE - 1.0 V fT 100 - MHz COB - 9 pF DC Current Gain Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=2mA Emitter Base Breakdown Voltage at IE=100µA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VBE=6V Collector Saturation Voltage at IC=600mA, IB=20mA Base Saturation Voltage at IC=600mA, IB=20mA Base Emitter Voltage at IC=10mA, VCE=1V Gain Bandwidth Product at VCE=10V, IC=50mA Collector Base Capacitance at VCB=10V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 20/10/2005