SEMTECH_ELEC MMBT28S

MMBT28S
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into one group, according
to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
20
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
1
A
Peak Collector Current
ICM
1.25
A
Base Current
IB
100
mA
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
Power Dissipation
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 20/10/2005
MMBT28S
Characteristics at Ta =25 OC
Symbol
Min.
Max.
Unit
at VCE=1V, IC=5mA
hFE
45
-
-
at VCE=1V, IC=100mA
hFE
200
1000
-
at VCE=1V, IC=800mA
hFE
40
-
-
V(BR)CBO
40
-
V
V(BR)CEO
20
-
V
V(BR)EBO
6
-
V
ICBO
-
100
nA
IEBO
-
100
nA
VCE(sat)
-
0.55
V
VBE(sat)
-
1.2
V
VBE
-
1.0
V
fT
100
-
MHz
COB
-
9
pF
DC Current Gain
Collector Base Breakdown Voltage
at IC=100µA
Collector Emitter Breakdown Voltage
at IC=2mA
Emitter Base Breakdown Voltage
at IE=100µA
Collector Cutoff Current
at VCB=35V
Emitter Cutoff Current
at VBE=6V
Collector Saturation Voltage
at IC=600mA, IB=20mA
Base Saturation Voltage
at IC=600mA, IB=20mA
Base Emitter Voltage
at IC=10mA, VCE=1V
Gain Bandwidth Product
at VCE=10V, IC=50mA
Collector Base Capacitance
at VCB=10V, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 20/10/2005