MMBT4401W NPN Silicon General Purpose Transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V IC 600 mA Total Power Dissipation Ptot 200 mW Junction Temperature TJ 150 O Storage Temperature Range Ts - 55 to + 150 O Collector Current C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE 20 40 80 100 40 300 - - Collector Cutoff Current at VCB = 35 V ICBO - 0.1 µA Base Cutoff Current at VEB = 5 V IEBO - 0.1 µA Collector Base Breakdown Voltage at IC = 0.1 mA V(BR)CBO 60 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 40 - V V(BR)EBO 5 - V VCEsat - 0.4 0.75 V VBEsat - 0.95 1.2 V fT 250 - MHz Ccb - 8 pF DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Emitter Base Breakdown Voltage at IE = 0.1 mA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector Base Capacitance at VCB = 5 V, IE = 0, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/12/2006 MMBT4401W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/12/2006