MMBTSD2652W NPN Silicon Epitaxial Planar Transistor for low frequency amplifier and general purpose amplification application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 15 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 6 V Collector Current IC 1) ICP 1.5 3 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O 1) C C Single pulse, Pw = 1 ms Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 200 mA Collector Cutoff Current at VCB = 15 V Emitter Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 25 mA Transition Frequency at VCE = 2 V, -IE = 200 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Symbol Min. Typ. Max. Unit hFE 270 - 680 - ICBO - - 0.1 µA IEBO - - 0.1 µA V(BR)CBO 15 - - V V(BR)CEO 12 - - V V(BR)EBO 6 - - V VCE(sat) - - 0.2 V fT - 400 - MHz Cob - 12 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/05/2007 MMBTSD2652W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/05/2007