MMBTSC4097W NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 0.5 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 3 V, IC = 10 mA Current Gain Group Collector Base Cutoff Current at VCB = 20 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 5 V, -IE = 20 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Q R Symbol Min. Typ. Max. Unit hFE hFE 120 180 - 270 390 - ICBO - - 1 µA IEBO - - 1 µA V(BR)CBO 40 - - V V(BR)CEO 32 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.6 V fT - 250 - MHz Cob - 6.5 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/11/2007 MMBTSC4097W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/11/2007