MPSA44U NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 500 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 6 V IC 300 mA Total Power Dissipation Ptot 625 mW Junction Temperature TJ 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current C C Characteristics at Ta = 25 OC Parameter DC Current Gain at IC = 1 mA, VCE = 10 V at IC = 10 mA, VCE = 10 V at IC = 30 mA, VCE = 10 V Collector Cutoff Current at VCB = 400 V Collector Cutoff Current at VCE = 400 V Emitter Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 1 mA, IB = 0.1 mA at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Output Capacitance at VCB = 20 V, f = 1 MHz Symbol Min. Max. Unit hFE hFE hFE 25 40 40 - - ICBO - 0.1 µA ICES - 0.5 µA IEBO - 0.1 µA V(BR)CBO 500 - V V(BR)CEO 400 - V V(BR)EBO 6 - V VCE(sat) VCE(sat) VCE(sat) - 0.4 0.5 0.75 V V V VBE(sat) - 0.75 V Cob - 7 pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/11/2007 MPSA44U SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/11/2007