MMBT591A PNP Silicon Epitaxial Planar Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Peak Pulse Current -ICM 2 A Power Dissipation Ptot 200 mW Junction Temperature TJ 150 O Storage Temperature Range TS - 65 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 100 mA at -VCE = 5 V, -IC = 500 mA at -VCE = 5 V, -IC = 1 A Collector Cutoff Current at -VCB = 30 V Collector Cutoff Current at -VCE = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 1 mA at -IC = 500 mA, -IB = 20 mA at -IC = 1 A, -IB = 100 mA Base Emitter Saturation Voltage at -IC = 1 A, -IB = 50 mA Base Emitter Voltage at -IC = 1 A, -VCE = 5 V Collector Capacitance at -VCB = 10 V, f = 1 MHz Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA, f = 100 MHz Symbol Min. Max. Unit hFE hFE hFE hFE 300 300 250 160 800 - - -ICBO - 0.1 µA -ICEO - 0.1 µA -IEBO - 0.1 µA -VCEsat - 0.2 0.35 0.5 V -VBEsat - 1.1 V -VBE - 1 V CC - 12 pF fT 150 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/09/2006 MMBT591A SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/09/2006