MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 60 V Emitter Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Base Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz O Y G L Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 90 135 200 300 - 180 270 400 600 - V(BR)CBO 60 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V ICBO - - 0.1 µA IEBO - - 0.1 µA VCE(sat) - - 0.3 V VBE(sat) - - 1 V fT - 250 - MHz COB - 3 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/09/2006 MMBTSC1623 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/09/2006