ST 2SC3112 NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications. 1.Emitter 3.Collector 2.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Ptot 625 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Power Dissipation Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 2 mA Current Gain Group A B Collector Cutoff Current at VCB = 50 V Emitter Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 10 V, IC = 10 mA Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz C C Symbol Min. Typ. Max. Unit hFE hFE 600 1200 - 1800 3600 - ICBO - - 100 nA IEBO - - 100 nA V(BR)CBO 50 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.25 V fT 100 - - MHz Cob - 3.5 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/04/2007 ST 2SC3112 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/04/2007