RB551V-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Ultra low VF • High reliability PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 SA Applications • High frequency rectification switching regulation Absolute Maximum Ratings (Ta = 25 OC) Parameter Top View Marking Code: "SA" Simplified outline SOD-323 and symbol Symbol Value Unit Peak Reverse Voltage VRM 30 V DC Reverse Voltage VR 20 V Mean Rectifying Current IO 0.5 A IFSM 2 A Junction Temperature Tj 125 O Storage Temperature Range Ts - 40 to + 125 O Symbol Max. Unit Forward Voltage at IF = 100 mA at IF = 500 mA VF 0.36 0.47 V Reverse Current at VR = 20 V IR 100 µA Peak Forward Surge Current (60 Hz for 1 Cyc.) C C Characteristics at Ta = 25 OC Parameter Note: ESD sensitive product handling required. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB551V-30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB551V-30 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006