RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol Applications • High speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 40 V Reverse Voltage VR 30 V Mean Rectifying Current IO 30 mA IFSM 200 mA Junction Temperature Tj 125 O Storage Temperature Range Ts - 40 to + 125 O Peak Forward Surge Current (60 Hz for 1 Cyc.) C C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit Forward Voltage at IF = 1 mA VF - 0.37 V Reverse Current at VR = 30 V IR - 0.5 µA Capacitance Between Terminals at VR = 1 V, f = 1 MHz CT 2 - pF Note: ESD sensitive product handling required. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB751V-40 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006