ST 1702 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into five groups, L, M, N, O and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Power Dissipation Ptot 600 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Tamb = 25 C O Parameter DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA Output Capacitance at VCB = 5 V, f = 1 MHz L M N O P Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 132 170 213 263 333 - 189 233 300 370 476 - V(BR)CBO 30 - - V V(BR)CEO 25 - - V V(BR)EBO 5 - - V ICBO - - 0.1 µA IEBO - - 0.5 µA VCE(sat) - - 0.7 V fT - 100 - MHz COB - 12 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/06/2006