ST 2N3704 NPN Silicon Epitaxial Planar Transistor for general purpose applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 600 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 ℃ Storage Temperature Range TS -55 to +150 ℃ SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/04/2005 ST 2N3704 Characteristics at Tamb=25℃ Symbol Min. Typ. Max. Unit *hFE 100 - 300 - BVCBO 50 - - V *BVCEO 30 - - V BVEBO 5 - - V ICBO - - 100 nA IEBO - - 100 nA Cob - - 12 pF *VCE(sat) - - 0.6 V *VBE(on) 0.5 - 1 V fT 100 - - MHz DC Current Gain at VCE=2V, IC=50mA Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VBE=3V Output Capacitance at VCB=10V, f=1MHz Collector Emitter Saturation Voltage at IC=100mA, IB=5mA Base Emitter On Voltage at VCE=2V, IC=100mA Current Gain Bandwidth Product at VCE=2V, IC=50mA, f=20MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/04/2005