ST 2SA1024 PNP Silicon Epitaxial Planar Transistor for high voltage applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage -VCBO 150 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 50 mA Emitter Current IE 50 mA Ptot 1000 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SA1024 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - -ICBO - - 0.1 μA -IEBO - - 0.1 μA fT - 120 - MHz COB - 4 5 pF -VBE - - 0.9 V -VCE(sat) - - 0.8 V DC Current Gain at -VCE=5V, -IC=10mA Collector Cutoff Current at -VCB=150V Emitter Cutoff Current at -VEB=5V Gain Bandwidth Product at -VCE=30V, -IC=10mA Output Capacitance at -VCB=10V, f=1MHz Base Emitter Voltage at -VCE=5V, -IC=30mA Collector Saturation Voltage at -IC=10mA, -IB=1mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002