SEMTECH_ELEC ST2N5401

ST 2N5400 / 2N5401
PNP Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier applications.
As complementary types the NPN transistors
ST 2N5550 and ST 2N5551 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
ST 2N5400
-VCEO
120
V
ST 2N5401
-VCEO
150
V
ST 2N5400
-VCBO
130
V
ST 2N5401
-VCBO
160
V
-VEBO
5
V
Collector Current
-IC
600
mA
Power Dissipation
Ptot
625
Junction Temperature
Tj
150
o
Storage Temperature Range
TS
-55 to +150
o
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
1)
1)
mW
C
C
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002
ST 2N5400 / 2N5401
Characteristics at Tamb=25 oC
Symbol
Min.
Typ.
Max.
Unit
ST 2N5400
hFE
30
-
-
-
ST 2N5401
hFE
50
-
-
-
ST 2N5400
hFE
40
-
180
-
ST 2N5401
hFE
60
-
240
-
ST 2N5400
hFE
40
-
-
-
ST 2N5401
hFE
50
-
-
-
ST 2N5400
-V(BR)CEO
120
-
-
V
ST 2N5401
-V(BR)CEO
150
-
-
V
ST 2N5400
-V(BR)CBO
130
-
-
V
ST 2N5401
-V(BR)CBO
160
-
-
V
-V(BR)EBO
5
-
-
V
DC Current Gain
at-VCE=5V, -IC=1mA
at -VCE=5V, -IC=10mA
at -VCE=5V, -IC=50mA
Collector Emitter Breakdown Voltage
at -IC=1mA
Collector Base Breakdown Voltage
at -IC=100μA
Emitter Base Breakdown Voltage
at -IE=10μA
Collector Cutoff Current
at -VCB=100V
ST 2N5400
-ICBO
-
-
100
nA
at -VCB=120V
ST 2N5401
-ICBO
-
-
50
nA
-IEBO
-
-
50
nA
at -IC=10mA, -IB=1mA
-VCE sat
-
-
0.2
V
at -IC=50mA, -IB=5mA
-VCE sat
-
-
0.5
V
at -IC=10mA, -IB=1mA
-VBEsat
-
-
1
V
at -IC=50mA, -IB=5mA
-VBEsat
-
-
1
V
at -VCE=10V,-IC=10mA,f=100MHz ST 2N5400
fT
100
-
400
MHz
ST 2N5401
fT
100
-
400
MHz
CCBO
-
-
6
pF
F
-
-
8
Emitter Cutoff Current
at -VEB=3V
Collector Saturation Voltage
Base Saturation Voltage
Gain Bandwidth Product
Collector Base Capacitance
at -VCB=10V, f=1MHz
Noise Figure
at -VCE=5V,-IC=200μA,RG=2kΩ,f=30HZ…15kHZ
Thermal Resistance Junction to Ambient
1)
RthA
-
-
200
dB
1)
K/W
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002
ST 2N5400 / 2N5401
IC - VBE
Collector Current Ic (mA)
Power Dissipation Ptot (mW)
Ptot-Ta
Ambient Temperature Ta ( ℃ )
Base Emitter Voltage VBE (V)
V CE(sat), V BE(sat) - I
Transition Frequency
Collector Emitter Saturation
Base Emitter Saturation Voltage
V C E ( s a t ) , V B E ( s at ) ( m V )
fT - IC
C o l l e c t o r C u r r e n t IC ( m A )
C
VBE(sat)
VCE(sat)
C o l l e c t o r C u r r e n t IC ( m A )
Collector Output Capacitance Cob (pF)
Cob - VCB
Collector Base Voltage VCB (V)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002