ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Base Current -IB 20 mA Power Dissipation Ptot 250 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SA1175 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group R hFE 110 - 180 - J hFE 135 - 220 - H hFE 170 - 270 - F hFE 200 - 320 - E hFE 250 - 400 - K hFE 300 - 600 - -ICBO - - 0.1 μA -IEBO - - 0.1 μA -VCE(sat) - 0.18 0.3 V fT 50 80 - MHz NF - 6 20 dB COB - 4.5 6 pF DC Current Gain at -VCE=6V, -IC=2mA Collector Cutoff Current at -VCB=60V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Gain Bandwidth Product at -VCE=6V, -IE=1mA Noise Figure at -VCE=6V, -IC=1V, RG=10kΩ, f=100Hz Output Capacitance at -VCB=10V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002