SEMTECH_ELEC ST2SC3876

ST 2SC3876
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into two groups, O and Y
and according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Symbol
Value
Unit
Collector Base Voltage
VCBO
35
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Base Current
IB
50
mA
Ptot
150
mW
Junction Temperature
Tj
125
O
Storage Temperature Range
TS
-55 to +125
O
Power Dissipation
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC3876
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
Current Gain Group O
hFE
70
-
140
-
Y
hFE
120
-
240
-
hFE
25
-
-
-
ICBO
-
-
0.1
μA
IEBO
-
-
0.1
μA
VCE(sat)
-
0.1
0.25
V
fT
-
300
-
MHz
VBE
-
0.8
1
V
COB
-
7
-
pF
DC Current Gain
at VCE=1V, IC=100mA
at VCE=6V, IC=400mA
Collector Cutoff Current
at VCB=35V
Emitter Cutoff Current
at VEB=5V
Collector Emitter Saturation Voltage
at IC=100mA, IB=10mA
Transition Frequency
at VCE=6V, IC=20mA
Base Emitter Voltage
at IC=100mA, VCE=1V
Collector Output Capacitance
at VCB=6V, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002