ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Base Current IB 50 mA Ptot 150 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC3876 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - hFE 25 - - - ICBO - - 0.1 μA IEBO - - 0.1 μA VCE(sat) - 0.1 0.25 V fT - 300 - MHz VBE - 0.8 1 V COB - 7 - pF DC Current Gain at VCE=1V, IC=100mA at VCE=6V, IC=400mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=5V Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=6V, IC=20mA Base Emitter Voltage at IC=100mA, VCE=1V Collector Output Capacitance at VCB=6V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002