ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Ptot 400 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE=6V, IC=2mA Current Gain Group at VCE=6V, IC=150mA Collector Saturation Voltage at IC=100mA, IB=10mA Base Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V at VEB=5V Gain Bandwidth Product at VCE=10V, IC=1mA Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ O Y G L Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 70 120 200 350 25 - 140 240 400 700 - - VCE(sat) - - 0.25 V VBE(sat) - - 1 V ICBO IEBO - - 0.1 0.1 µA µA fT 80 - - MHz COB - 2 3 pF NF - 1 1 dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2SC1815 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005