ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Emitter Current IE 150 mA Ptot 400 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 7/12/2002 ST 2SA1267 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - G hFE 200 - 400 - -ICBO - - 0.1 μA -IEBO - - 0.1 μA -VCE(sat) - 0.1 0.3 V fT 80 - - MHz NF - 1 10 dB COB - 4 7 pF DC Current Gain at -VCE=6V, -IC=2mA Collector Cutoff Current at -VCB=50V Emitter Cutoff Current at -VEB=5V Collector Emitter Saturation Voltage at -IC=100mA, -IB=10mA Transition Frequency at -VCE=10V, -IE=1mA Noise Figure at -VCE=6V, -IC=0.1V, f=1KHZ, RG=10kΩ Collector Output Capacitance at -VCB=10V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 7/12/2002