SEMTECH_ELEC ST2SA1267

ST 2SA1267
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y
and G according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 oC)
Symbol
Value
Unit
Collector Base Voltage
-VCBO
50
V
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
150
mA
Emitter Current
IE
150
mA
Ptot
400
mW
Junction Temperature
Tj
125
O
Storage Temperature Range
TS
-55 to +125
O
Power Dissipation
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 7/12/2002
ST 2SA1267
Characteristics at Tamb=25 oC
Symbol
Min.
Typ.
Max.
Unit
Current Gain Group O
hFE
70
-
140
-
Y
hFE
120
-
240
-
G
hFE
200
-
400
-
-ICBO
-
-
0.1
μA
-IEBO
-
-
0.1
μA
-VCE(sat)
-
0.1
0.3
V
fT
80
-
-
MHz
NF
-
1
10
dB
COB
-
4
7
pF
DC Current Gain
at -VCE=6V, -IC=2mA
Collector Cutoff Current
at -VCB=50V
Emitter Cutoff Current
at -VEB=5V
Collector Emitter Saturation Voltage
at -IC=100mA, -IB=10mA
Transition Frequency
at -VCE=10V, -IE=1mA
Noise Figure
at -VCE=6V, -IC=0.1V, f=1KHZ, RG=10kΩ
Collector Output Capacitance
at -VCB=10V, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 7/12/2002