ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Base Current IB 100 mA Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC1959 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - G hFE 200 - 400 - hFE 25 - - - VBE - 0.8 1 V IEBO - - 0.1 μA ICBO - - 0.1 μA VCE(sat) - 0.1 0.25 V fT - 300 - MHz COB - 7 - pF DC Current Gain at VCE=1V, IC=100mA at VCE=6V, IC=400mA Base Emitter Voltage at IC=100mA, VCE=1V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCB=35V Collector Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=6V, IC=20mA Output Capacitance at VCB=6V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002