ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/12/2002 ST 2SC2458 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y hFE 70 - 140 - hFE 120 - 240 - G hFE 200 - 400 - L hFE 350 - 700 - ICBO - - 0.1 μA IEBO - - 0.1 μA VCE(sat) - 0.10 0.25 V fT 80 - - MHz NF - 1.0 10 dB COB - 2.0 3.5 pF Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=10V, IC=1mA Noise Figure at VCE=6V, IC=0.1mA f=1KHz,Rg=10KΩ Collector Output Capacitance at VCB=10V, f=1MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/12/2002