SEMTECH_ELEC STKSD471

ST KSD471
NPN Silicon Epitaxial Planar Transistor
Audio Frequency Power amplifier applications.
The transistor is subdivided into three group, O, Y and
G according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25℃)
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST KSD471
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
O
hFE
70
-
140
-
Y
hFE
120
-
240
-
G
hFE
200
-
400
-
V(BR)CEO
30
-
-
V
V(BR)CBO
40
-
-
V
V(BR)EBO
5
-
-
V
ICBO
-
-
0.1
μA
VCE(sat)
-
-
0.5
V
VBE(sat)
-
-
1.2
V
COB
-
18
-
pF
fT
-
130
-
MHz
DC Current Gain
at VCE=1V, IC=100mA
Current Gain Group
Collector Emitter Breakdown Voltage
at IC=10mA
Collector Base Breakdown Voltage
at IC=100μA
Emitter Base Breakdown Voltage
at IE=100μA
Collector Cutoff Current
at VCB=30V
Collector Saturation Voltage
at IC=500mA, IB=50mA
Base Saturation Voltage
at IC=500mA, IB=50mA
Collector Output Capacitance
at VCB=6V, f=1MHz
Transition Frequency
at VCE=6V, IC=10mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002