ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Base Current IB 10 mA Ptot 300 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC2784 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group P hFE 200 - 400 - F hFE 300 - 600 - E hFE 400 - 800 - U hFE 600 - 1200 - hFE 150 580 - - ICBO - - 0.05 μA IEBO - - 0.05 μA ICEO - - 1 μA fT 50 110 - MHz NV - 25 40 mV COB - 1.6 2.5 pF VBE 0.55 0.59 0.65 V VCE(sat) - 0.07 0.3 V DC Current Gain at VCE=6V, IC=1mA at VCE=6V, IC=0.1mA Collector Cutoff Current at VCB=120V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCE=100V Gain Bandwidth Product at VCE=6V, IE=1mA Noise Voltage Output Capacitance at VCB=30V, f=1MHz Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at IC=10mA, IB=1mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002