ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․High frequency current gain ․High speed switching ․Small output capacitance TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 40 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Current (10μs pulse) IC 500 mA Ptot 600 mW Junction Temperature Tj 150 Storage Temperature Range TS Power Dissipation -55 to+150 O C O C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/08/2003 ST 2SC2901 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group L hFE 40 - 120 - K hFE 100 - 200 - ICBO - - 0.1 μA IEBO - - 0.1 μA VCE(sat) - 0.15 0.25 V VBE(sat) - 0.8 0.85 V ton - 8 12 ns tstg - 6 13 ns toff - 12 18 ns fT 500 750 - MHz COB - 1.8 4 pF DC Current Gain* at VCE=1V, IC=10mA Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage* at IC=10mA, IB=1mA Base Saturation Voltage* at IC=10mA, IB=1mA Turn-on Time at VCC=3V, IC=10mA, IB1=3mA, -VBE=1.5V Storage Time at IC=10mA, IB1= -IB2=10mA Turn-off Time at VCC=3V, IC=10mA, IB1=3mA, -IB2=1.5mA Gain Bandwidth Product at VCE=10V, -IE=10mA, f=100MHz Output Capacitance at VCB=5V, f=1MHz *Pulsed PW≦350μs, Duty Cycle≦2% SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/08/2003 ST 2SC2901 Collector current vs. collector emitter voltage 200 25 Collector current vs. collector emitter voltage 20 10 20 180 160 8 140 160 16 120 4 120 2 80 1 40 100 12 Ic (mA) Ic (mA) 6 80 8 60 40 4 I B =0.5m A IB=20 A 0 0 0.8 0.4 1.2 1.6 0 2.0 8 4 VCE (V) VCE (V) Total power dissipation vs. ambient temperature DC current gain vs. collector current 1000 VCE=1V 600 25 C 400 hFE Total power dissipation, mW 800 Ta=75 C 100 -25 C 200 0 10 50 100 150 200 0.1 100 10 1 Ambient temperature Ta ( C) I C, mA Input and output capacitance vs. reverse voltage Base and collector saturation voltage vs. collector current 30 3 f=1MHz IE=0(Cob) IC=0(Cib) IC/IB=10 10 VBE(sat) Ta=75 C -25 C 25 C Cob, pF Cib, pF 1 VCE(sat), V VBE(sat), V 20 16 12 VCE(sat) 0.1 Ta=75 C 25 C -25 C Cib Cob 1 0.1 0.01 0.1 10 1 100 0.1 I C, mA 10 1 100 VCB, V VEB , V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/08/2003 ST 2SC2901 Gain bandwidth product vs. emitter current Switching time vs. collector current 100 10000 VCC=10V I C/I B =10 I B1 = -I B2 VBB = -5V VCE=10V f T, (MHz) tsw, ns 1000 tr 10 tf 100 td tstg 1 10 -0.1 -1 -10 -100 2 I E, mA 100 10 200 I C, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/08/2003