SEMTECH_ELEC ST2SC2901

ST 2SC2901
NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed
switching applications.
The transistor is subdivided into two groups L and K,
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Features
․High frequency current gain
․High speed switching
․Small output capacitance
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCES
40
V
Collector Emitter Voltage
VCEO
15
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
200
mA
Collector Current (10μs pulse)
IC
500
mA
Ptot
600
mW
Junction Temperature
Tj
150
Storage Temperature Range
TS
Power Dissipation
-55 to+150
O
C
O
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/08/2003
ST 2SC2901
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
Current Gain Group L
hFE
40
-
120
-
K
hFE
100
-
200
-
ICBO
-
-
0.1
μA
IEBO
-
-
0.1
μA
VCE(sat)
-
0.15
0.25
V
VBE(sat)
-
0.8
0.85
V
ton
-
8
12
ns
tstg
-
6
13
ns
toff
-
12
18
ns
fT
500
750
-
MHz
COB
-
1.8
4
pF
DC Current Gain*
at VCE=1V, IC=10mA
Collector Cutoff Current
at VCB=20V
Emitter Cutoff Current
at VEB=3V
Collector Saturation Voltage*
at IC=10mA, IB=1mA
Base Saturation Voltage*
at IC=10mA, IB=1mA
Turn-on Time
at VCC=3V, IC=10mA, IB1=3mA, -VBE=1.5V
Storage Time
at IC=10mA, IB1= -IB2=10mA
Turn-off Time
at VCC=3V, IC=10mA, IB1=3mA, -IB2=1.5mA
Gain Bandwidth Product
at VCE=10V, -IE=10mA, f=100MHz
Output Capacitance
at VCB=5V, f=1MHz
*Pulsed PW≦350μs, Duty Cycle≦2%
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/08/2003
ST 2SC2901
Collector current vs.
collector emitter voltage
200
25
Collector current vs.
collector emitter voltage
20
10
20
180 160
8
140
160
16
120
4
120
2
80
1
40
100
12
Ic (mA)
Ic (mA)
6
80
8
60
40
4
I B =0.5m A
IB=20 A
0
0
0.8
0.4
1.2
1.6
0
2.0
8
4
VCE (V)
VCE (V)
Total power dissipation vs.
ambient temperature
DC current gain vs. collector current
1000
VCE=1V
600
25 C
400
hFE
Total power dissipation, mW
800
Ta=75 C
100
-25 C
200
0
10
50
100
150
200
0.1
100
10
1
Ambient temperature Ta ( C)
I C, mA
Input and output capacitance
vs. reverse voltage
Base and collector saturation
voltage vs. collector current
30
3
f=1MHz
IE=0(Cob)
IC=0(Cib)
IC/IB=10
10
VBE(sat)
Ta=75 C
-25 C
25 C
Cob, pF
Cib, pF
1
VCE(sat), V
VBE(sat), V
20
16
12
VCE(sat)
0.1
Ta=75 C
25 C
-25 C
Cib
Cob
1
0.1
0.01
0.1
10
1
100
0.1
I C, mA
10
1
100
VCB, V
VEB , V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/08/2003
ST 2SC2901
Gain bandwidth product
vs. emitter current
Switching time vs. collector current
100
10000
VCC=10V
I C/I B =10
I B1 = -I B2
VBB = -5V
VCE=10V
f T, (MHz)
tsw, ns
1000
tr
10
tf
100
td
tstg
1
10
-0.1
-1
-10
-100
2
I E, mA
100
10
200
I C, mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/08/2003