ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V IC 8 A Total Power Dissipation (Ta = 25 OC) Ptot 2 W Total Power Dissipation (TC = 25 OC) Ptot 80 Junction Temperature TJ 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current W C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 2 A hFE 10 - 70 - Collector Cutoff Current at VCB = 700 V ICBO - - 100 µA Emitter Cutoff Current at VEB = 9 V IEBO - - 100 µA Collector Base Breakdown Voltage at IC = 100 µA V(BR)CBO 700 - - V Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO 400 - - V Emitter Base Breakdown Voltage at IE = 1 mA V(BR)EBO 9 - - V Collector Emitter Saturation Voltage at IC = 5 A, IB = 1 A VCE(sat) - - 2 V Base Emitter Saturation Voltage at IC = 5 A, IB = 1 A VBE(sat) - - 1.6 V Current Gain Bandwidth Product at VCE = 10 V, IC = 0.5 A fT 4 - - MHz Ccb - 110 - pF Collector Base Capacitance at VCB = 10 V, f = 0.1 MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/04/2007 ST 13007 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/04/2007