SEMTECH_ELEC ST2SC2786

ST 2SC2786
NPN Silicon Epitaxial Planar Transistor
for FM RF amplifier and local oscillator of FM tuner.
The transistor is subdivided into three groups M, L,
and K, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Features
1) High gain bandwidth product
2) Small output capacitance
3) Low noise figure
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Symbol
Value
Unit
Collector Base Voltage
VCBO
30
V
Collector Emitter Voltage
VCEO
20
V
Emitter Base Voltage
VEBO
4
V
Collector Current
IC
20
mA
Base Current
IB
20
mA
Ptot
250
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
Power Dissipation
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/05/2003
ST 2SC2786
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
Current Gain Group M
hFE
40
-
80
-
L
hFE
60
-
120
-
K
hFE
90
-
180
-
ICBO
-
-
0.1
μA
IEBO
-
-
0.1
μA
VBE
-
0.72
-
V
VCE(sat)
-
0.1
0.3
V
fT
400
600
-
MHz
Gpe
18
22
-
dB
CC․rb’b
-
12
15
Ps
COB
-
1
1.3
pF
NF
-
3.0
5
dB
DC Current Gain
at VCE=6V, IC=1mA
Collector Cutoff Current
at VCB=30V
Emitter Cutoff Current
at VEB=4V
Base Emitter Voltage
at VCE=6V, IC=1mA
Collector Saturation Voltage
at IC=10mA, IB=1mA
Gain Bandwidth Product
at VCE=6V, IE=-1mA
Power Gain
at VCE=6V, IE=-1mA
at f=100MHz, RG=50Ω
Collector Base Time Constant
at VCE=6V, IE=-1mA, f=31.9MHz
Output Capacitance
at VCB=6V, f=1MHz
Noise Figure
at VCE=6V, IE=-1mA
at f=100MHz, RG=50Ω
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/05/2003
ST 2SC2786
Total power dissipation vs.
ambient temperature
300
Total power dissipation, mW
Collector current vs.
base emitter voltage
Collector current vs.
collector emitter voltage
In free air
50
10
20
250
80
8
5
60
6
I C, mA
150
10
70
Ic (mA)
200
VCE=6V
50
40
4
100
2
2
30
1
20
0.5
50
I B=10 A
0
0
25
50
75
125
100
8
4
150
0.2
12
20
16
0.1
0
VCE (V)
Ambient temperature ( C)
0.2
0.4
0.6
0.8
1
1.2
VBE ,V
DC current gain vs.
collector emitter voltage
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Gain bandwidth product
vs. emitter current
IC=1mA
VCE= 6V
VCE= 6V
hFE
100
fT, MHz
200
200
100
50
50
500
20
20
200
10
0.1 0.2
0.5
1
2
5
100
10
10 20
1
I C, mA
2
5
10 20
-10 -20
-100
Cob, pF
Cib, pF
VCE(sat)
3
2
Collector base time constant
vs. emitter current
100
f=1MHz
VBE (sat)
0.1
-1
I E, mA
Imput capacitance vs. emitter base voltage
Output capacitance vs. collector base voltage
I C/I B =10
1
-0.1
50
VCE, V
Base collector saturation volage
vs. collector current
VBE(sat) , V
VCE(sat), V
1000
Cc rb'b, ps
h FE - DC Current Gain
500
Cib(Ic=0)
Cob(I E =0)
1
0.5
VCB= 6V
f=31.9MHz
10
0.2
0.01
0.1
1
10 20
I C, mA
0.1
1
10
VCB, V
VEB, V
100
1
-0.1 -0.3
-1
-3
-10 -20
I E, mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/05/2003
ST 2SC2786
Forward transfer amittance
vs. collector current
Reverse transfer admittance
vs. collector current
500
-gre
0
-bre
10.7MHz
gre, m S
b re , m S
g fe, m S
b fe, m S
100
g fe 100MHz
10.7MHz
-gre
10
0.2
V CE =6V
input short
0.3
1
0.2
-bre
0.5
-b fe 10.7MHz
gie
100 MHz
0.01
0.1
10 20
1
1
10
0.1
1
10 20
I C, mA
I C, mA
I C, mA
Reverse transfer amittance
vs. collector current
Input amittance vs. collector current
Output amittance vs. collector current
1
V CB =6V
input short
-b rb 100MHz
1
V CB =6V
output short
500
0.5
g oe 100MHz
-b rb 10.7MHz
0.05
-b ib 10.7MHz
g oe, m S
b oe, m S
g ib 100MHz
100
g ib , m S
b ib , m S
0.1
-b ib
100MHz
10
0.1
1
10
g oe 10.7MHz
0.2
b oe 10.7MHz
0.1
0.05
-g rb 100MHz
0.02
V CE =6V
input short
b oe 100MHz
0.5
g ib 10.7MHz
-g rb 10.7MHz
0.2
0.02
0.01
1
100
0.2
1
10 20
0.1
1
10
100
I C, mA
I C, mA
I C, mA
Reverse transfer amittance vs. frequency
Input amittance vs. frequency
Forward transfer amittance
vs. collector current
V CE =6V
I C =1mA
input short
V CE =6V
I C =1mA
input short
10
0.5
5
0.2
-b re
0.1
-g re
0.05
g ie , m S
b ie , m S
1
-g fb 100MHz
-g fb 10.7MHz
100
2
b ie
g ie
1
b fb
b fb 10.7MHz
10
100MHz
0.5
0.02
V CB =6V
output short
500
g fb, m S
b fb, m S
g rb , m S
b rb , m S
gie
1
0.1 bie
0.4
g re , m S
b re , m S
100 MHz
bie
10.7MHz
10
0.01
V CE =6V
output short
100 MHz
10.7MHz
0.1
-b fe 100MHz
g fe
Input admittance vs. collector current
100
g ie , m S
b ie , m S
V CE =6V
output short
0.2
10
20
50
100
f , MHz
200
10
20
50
100
200
f , MHz
1
0.2
1
10 20
I C, mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/05/2003
ST 2SC2786
Forward transfer amittance vs. frequency
Power gain, noise figure
vs. emitter current
Output amittance vs. frequency
VCE=6V
I C=1mA
output short
25
VCE=6V
I C=1mA
input short
20
Gpe
VCE=6V
f=100MHz
test circuit
2
g fe
20
10
b fe
5
0.5
0.2
g oe
0.1
0.02
10
20
50
100
f, MHz
200
12
10
8
5
0.05
2
15
4
NF
0
10
20
50
100
200
f, MHz
-0.1
-1
-10
I E, mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/05/2003
0
NF, dB
50
Gpe, dB
1
g oe, m S
b oe, m S
g fe, m S
b fe, m S
100
b oe