SEMTECH_ELEC ST2SC945

ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O, Y,
P and L, according to its DC current gain. As
complementary type the PNP transistor ST 2SA733
is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Symbol
Value
Unit
Collector Base Voltage
VCBO
60
V
Collector Emitter Voltage
VCEO
50
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Power Dissipation
Ptot
250
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
Current Gain Group R
hFE
40
-
80
-
O
hFE
70
-
140
-
Y
hFE
120
-
240
-
P
hFE
200
-
400
-
L
hFE
350
-
700
-
V(BR)CBO
60
-
-
V
V(BR)CEO
50
-
-
V
V(BR)EBO
5
-
-
V
ICBO
-
-
0.1
μA
IEBO
-
-
0.1
μA
VCE(sat)
-
0.15
0.3
V
fT
-
300
-
MHz
COB
-
2.5
-
pF
NF
-
4
-
dB
DC Current Gain
at VCE=6V, IC=1mA
Collector Base Breakdown Voltage
at IC=100μA
Collector Emitter Breakdown Voltage
at IC=10mA
Emitter Base Breakdown Voltage
at IE=10μA
Collector Cutoff Current
at VCB=40V
Emitter Cutoff Current
at VEB=3V
Collector Saturation Voltage
at IC=100mA, IB=10mA
Gain Bandwidth Product
at VCE=6V, IC=10mA
Output Capacitance
at VCB=6V, f=1MHz
Noise Figure
at VCE=6V, IE=0.5mA
at f=1KHz, RS=500Ω
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945
Total power dissipation
vs. ambient temperature
Normalized collector cutoff current
vs. ambient temperature
300
P tot (mW)
250
200
150
100
50
0
50
25
75
150
125
100
I CBO(Ta)
Normalized collector cutoff current
I CBO(Ta=25 C)
10000
Free air
1000
100
10
1
0
20
40
100 120 140
80
60
160
Tamb ( C)
Tamb ( C)
Collector current vs.
collector emitter voltage
Collector current vs.
collector emitter voltage
1.0 0.9
0.8
0.7
0.6
0.5
100
80
10
4.5
4
8
3.5
0.4
3
6
0.3
Ic - mA
Ic - mA
60
40
0.2
2.5
2
4
1.5
1
20
2
I B =0.1mA
0
0
0.4
1.2
0.8
1.6
0
0
2.0
IB=0.5 A
10
30
20
VCE, V
40
50
VCE, V
h FE - I C
h FE - I C
360
360
pulse d
320
320
280
280
VCE=6V
pulsed
VCE=6.0V
200
160
3.0V
120
2.0V
80
1.0V
0.5V
40
DC CURRENT GAIN
DC CURRENT GAIN
Ta=75 C
240
240
200
25 C
160
120
-25 C
80
40
0
0
0.01
0.1
1
10
100
0.01
COLLECTOR CURRENT, mA
0.1
1
10
100
COLLECTOR CURRENT, mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945
Collector current vs. base emitter voltage
Normalized h-parameters
vs. collector current
100
10
VCE=6V
pulsed
He=
Normalized h-parameters
1
-25
C
Ta=
25 C
75
C
10
Ic - mA
VCE=6V
f=1kHz
Hie
0.1
Hre
he(Ic)
he(Ic=1mA)
Hoe
Hfe
1
Hfe
Hoe
Hre
Hie
0.01
0.2
0.4
0.3
0.5
0.6
0.7
0.9
0.8
0.1
0.1
1
10
1
Ic ,
VBE , V
mA
Collector and base saturation
fT - I E
voltage vs. collector current
10
10000
1
IC/IB=10
VBE(sat)
1000
20 50
50
VCE(sat)
0.1
20
fT - MHz
VBE(sat) , V
VCE(sat) , V
pulsed
VCE=10V
6V
100
2V
1V
IC/IB=10
0.01
0.1
1
10
10
100
-0.1
-1
Emitter Current, mA
Collector Current, mA
Small signal current gain
vs. DC current gain
VEB, VCB vs. Cib, Cob
1000
100
VCE=6V
Ic=1mA
f=1kHz
Small signal current gain
f=1MHz
Cib(Ic=0)
Cib, Cob - pF
-100
-10
10
Cob(IE=0)
1
0.1
0.1
1
10
100
800
600
400
200
0
200
VEB, VCB - V
400
600
800
1000
DC current gain
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
80
60
40
20
0
50
40
30
20
10
0
VCE=6V
Ic=1mA
f=1kHz
40
30
hoe
hre
hie
20
10
0
200
400
600
800
Normalized h-parameters vs.
collector emitter voltage
3
Normalized h- parameters
hoe - Output admittance ( s)
100
Input impedance, voltage feedback
ratio and output admittance vs.
small signal current gain
50
hie - Input impedance(k )
hre - Voltage feedback ratio (x10 -4 )
ST 2SC945
1000
hfe - Small signal current gain
Ic=1mA
f=1kHz
he(VCE)
He= he(VCE=6V)
2
hoe
hre
hfe
1
hre hoe
hfe
0
hie
hie
20
10
VCE - V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
30