ST 2SC535 NPN Silicon Epitaxial Planar Transistor VHF amplifier, mixer, local oscillator. The transistor is subdivided into two groups B and C according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 4 V Collector Current IC 20 mA Power Dissipation Ptot 100 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC535 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group B hFE 60 - 120 - C hFE 100 - 200 - V(BR)CBO 30 - - V V(BR)CEO 20 - - V V(BR)EBO 4 - - V ICBO - - 0.5 μA VCE(sat) - 0.17 - V VBE - 0.72 - V fT 450 940 - MHz COB - 0.9 1.2 pF NF - 3.5 5.5 dB PG 17 20 - dB yie 1.3+j5.3 - - mS yre -0.078-j0.41 - - mS yfe 32-j10 - - mS yoe 0.08+j0.82 - - mS DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=1Ma Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=10V Collector Saturation Voltage at IC=20mA, IB=4mA Base Emitter Voltage at VCE=6V, IC=1mA Gain Bandwidth Product at VCE=6V, IC=5mA Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, f=100MHz, IC=1mA, Rg=50Ω Power Gain at VCE=6V, f=100MHz, IC=1mA Input admittance(typ) at VCE=6V, f=100MHz, IC=1mA Reverse transfer admittance(typ) at VCE=6V, f=100MHz, IC=1mA Foward transfer admittance(typ) at VCE=6V, f=100MHz, IC=1mA Output admittance(typ) at VCE=6V, f=100MHz, IC=1mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC535 Typical Output Characteristics 20 150 Collector Current l c (mA) Collector power dissipation pc (mW) Maximum Collector Dissipation Curve 100 50 16 12 100 Pc =1 0 75 8 0m W 50 4 25 A l B=0 4 0 150 100 50 0 12 8 16 20 Ambient Temperature Ta ( oC) Collector to Emitter Voltage VCE (V) Typical Output Characteristics DC Current Transfer Ratio vs. Collector Current 5 120 50 40 4 30 3 20 2 10 A 1 l B =0 0 4 8 12 16 20 DC Current Transfer ratio h FE Collector Current l c (mA) 300 275 250 225 200 175 150 125 100 80 60 40 20 0 0.1 Collector to Emitter Voltage VCE (V) 0.2 0.5 1.0 2 5 10 20 Collector Current I C (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002