2SB154100MA 2SB154100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB154100MA is a schottky barrier diode chips Ø Lb fabricated in silicon epitaxial planar technology; La Ø Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching Chip Topography and Dimensions La: Chip Size: 1540µm; Lb: Pad Size: 1340µm; ORDERING SPECIFICATIONS power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 1540µm X 1540µm; Product Name Specification Ø Chip Thickness: 280±20µm; 2SB154100MAYY For Axial leads package ABSOLUTE MAXIMUM RATINGS Parameters Symbol Ratings Unit Maximum Repetitive Peak Reverse Voltage VRRM 100 V Average Forward Rectified Current IFAV 3 A Peak Forward Surge [email protected] IFSM 80 A TJ 150 °C TSTG -40~150 °C Maximum Operation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tamb=25 ) Parameters Symbol Test Conditions IR=0.5mA Min. Max. Unit 100 -- V Reverse Voltage VBR Forward Voltage VF IF=3A -- 0.85 V Reverse Current IR VR=100V -- 0.5 mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1