SILAN 3VD223600NEYL

3VD223600NEYL
3VD223600NEYL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
DESCRIPTION
Ø
3VD223600NEYL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
Ø
ESD improved capability
Ø
Advanced termination scheme to provide enhanced
voltage-blocking capability.
Ø
Avalanche Energy Specified
Ø
Source-to-Drain Diode Recovery Time Comparable to
Ø
The chips may packaged in TO-92 type.
Ø
The packaged product is widely used in AC-DC
a Discrete Fast Recovery Diode
CHIP TOPOGRAPHY
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
Ø
Die size: 2.23mm*1.39mm.
Ø
Chip Thickness: 300±20µm.
Ø
Top metal : Al, Backside Metal : Ag.
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Drain Current
ID
300
mA
Operation Junction Temperature
TJ
150
Storage Temperature
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward on
Voltage
Symbol
Test conditions
Min
Typ
Max
Unit
V(BR)DSS
ID=1mA
600
---
----
V
Vth(GS)
ID=50uA VDS=VGS
3
---
4.5
V
lGSS
VGS=±20V, VDS=0V
---
---
±10
nA
µA
IDSS
VDS=600V, VGS=0V
---
---
1
RDS(on)
ID=0.4A, VGS=10V
---
---
15
VFSD
ID=0.8A,VGS=0V
---
---
1.6
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
V
2007.11.20
Page 1 of 1