3VD223600NEYL 3VD223600NEYL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD223600NEYL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø ESD improved capability Ø Advanced termination scheme to provide enhanced voltage-blocking capability. Ø Avalanche Energy Specified Ø Source-to-Drain Diode Recovery Time Comparable to Ø The chips may packaged in TO-92 type. Ø The packaged product is widely used in AC-DC a Discrete Fast Recovery Diode CHIP TOPOGRAPHY power suppliers, DC-DC converters and H-bridge PWM motor drivers. Ø Die size: 2.23mm*1.39mm. Ø Chip Thickness: 300±20µm. Ø Top metal : Al, Backside Metal : Ag. EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current ID 300 mA Operation Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Source-Drain Diode Forward on Voltage Symbol Test conditions Min Typ Max Unit V(BR)DSS ID=1mA 600 --- ---- V Vth(GS) ID=50uA VDS=VGS 3 --- 4.5 V lGSS VGS=±20V, VDS=0V --- --- ±10 nA µA IDSS VDS=600V, VGS=0V --- --- 1 RDS(on) ID=0.4A, VGS=10V --- --- 15 VFSD ID=0.8A,VGS=0V --- --- 1.6 HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 V 2007.11.20 Page 1 of 1