2SB267100MA 2SB267100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB267100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current ( typical IR=0.002mA@Vr=100V ) and maximum 150°C operation junction temperature; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching Chip Topography and Dimensions La: Chip Size: 2670µm; Lb: Pad Size: 2470µm; ORDERING SPECIFICATIONS power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 2670µm X 2670µm; Product Name Specification Ø Ø Chip Thickness: 280±20µm; 2SB267100MAYY For Axial leads package Have two top side electrode materials for customer 2SB267100MAYL to choose, detail refer to ordering specifications. For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Symbol Ratings Unit Maximum Repetitive Peak Reverse Voltage VRRM 100 V Average Forward Rectified Current IFAV 10 A Peak Forward Surge [email protected] IFSM 150 A TJ 150 °C TSTG -40~150 °C Maximum Operation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tamb=25 ) Parameters Symbol Test Conditions IR=0.5mA Min. Max. Unit 100 -- V Reverse Voltage VBR Forward Voltage VF IF=10A -- 0.85 V Reverse Current IR VR=100V -- 0.5 mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.04.27 Page 1 of 1