Product Description Sirenza Microdevices’ SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6533 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band. SGB-6533 SGB-6533Z Pb RoHS Compliant & Green Package DC – 3 GHz Active Bias Gain Block This product is available in a RoHS Compliant and Green package with matte tin finish, designated by the “Z” package suffix. Product Features • Functional Block Diagram Packaging • • • • • • Vbias NC NC VCC Active Bias NC NC NC NC RFOUT RFIN Available in Lead Free, RoHS compliant, & Green High reliability SiGe HBT Technology Robust Class 1C ESD Simple and small size P1dB = 18.5 dBm @ 1950MHz IP3 = 32 dBm @ 1950MHz Low Thermal Resistance = 60 C/W Applications NC NC NC NC NC GND • • • 5V applications LO buffer amp RF pre-driver and RF receive path Key Specifications Symbol fO Parameters: Test Conditions Z0 = 50Ω, VCC = 5.0V, Ic = 88mA, T = 30ºC) Unit Min. Frequency of Operation MHz DC Small Signal Gain – 850MHz S21 Small Signal Gain – 1950MHz dB 17.0 Output Power at 1dB Compression – 1950MHz 17.0 18.5 32.0 Output IP3 – 1950MHz dB 30.0 32.0 dB 11.0 15.0 14.0 Output IP3 – 2400MHz ORL 20.0 18.0 Output IP3 – 850MHz Input Return Loss @ 1950MHz 18.5 19.0 dBm Output Power at 1dB Compression – 2400MHz IRL 3000 17.0 Output Power at 1dB Compression – 850MHz OIP3 Max. 25.0 Small Signal Gain – 2400MHz P1dB Typ. 32.0 Output Return Loss @1950MHz dB 10.0 Ic Current mA 76 88 98 NF Noise Figure @1950MHz dB 3.7 4.7 ºC/W 60 Rth, j-l Thermal Resistance (junction - lead) The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2006 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Detailed Performance Table: Vcc=5V, Ic=88mA, T=25C, Z=50ohms Symbol Parameter Units 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz G Small Signal Gain dB 28.4 26.9 25.0 18.5 17.0 13.1 OIP3 Output 3rd Order Intercept Point dBm 32.0 32.0 32.0 32.0 P1dB Output Power at 1dB Compression dBm 19.1 19.0 18.5 18.0 IRL Input Return Loss dB 15.1 19.1 26.4 15.0 13.5 8.7 ORL Output Return Loss dB 21.4 18.5 15.3 14.0 11.9 13.6 S12 Reverse Isolation dB 30.8 30.3 29.7 26.2 25.4 22.9 NF Noise Figure dB 4.6 3.1 3.1 3.7 4.2 4.9 Pin Out Description Pin # Function 1,2,4, 6, 7,8,11, 12,14 Description NC 3 RFIN RF input pin. A DC voltage should not be connected externally to this pin 5 GND An extra ground pin that is connected to the backside exposed paddle. Connection is optional. 10 RFOUT RF Output pin. Bias is applied to the Darlington stage thru this pin. 13 VBIAS This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke. 16 VCC This is Vcc for the active bias circuit. Backside GND The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the main thermal path. These are no connect pins. Leave them unconnected on the PC board. Simplified Device Schematic 16 15 14 Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 13 Absolute Maximum Ratings Parameters Active Bias 1 12 11 2 10 3 Value Unit Current (Ic total) 150 mA Device Voltage (VD) 6.5 V Power Dissipation 0.75 W Operating Lead Temperature (TL) -40 to +85 ºC RF Input Power, Zload = 50 ohm 15 dBm 7 dBm RF Input Power, Zload > 10:1 VSWR Storage Temperature Range 9 4 Operating Junction Temperature (TJ) -40 to +150 ºC +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. 5 6 7 8 303 South Technology Court, Broomfield, CO 80021 Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH’ j-l Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Evaluation Board Data (Vcc=VBIAS = 5.0V, Ic = 88mA) Bias Tee is substituted for DC feed inductor (L1) OIP3 vs. Frequency Gain vs. Frequency 34.0 30.0 28.0 33.0 OIP3 (dBm) Gain (dB) 26.0 24.0 22.0 20.0 32.0 31.0 30.0 +25c 18.0 +25c +85c 16.0 +85c 29.0 -40c -40c 28.0 14.0 0.4 0.9 1.4 1.9 0.4 2.4 0.9 Frequency (GHz) 19.0 6.0 18.5 5.0 18.0 +25c +85c 17.0 1.9 2.4 Noise Figure vs. Frequency 7.0 Noise Figure (dB) P1dB (dBm) P1dB vs. Frequency 19.5 17.5 1.4 Frequency (GHz) 4.0 3.0 +25c 2.0 +85c -40c 16.5 -40c 1.0 16.0 0.0 0.4 0.9 1.4 1.9 0.0 2.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Frequency (GHz) Current vs. Voltage Ic vs. Tem perature 0.160 0.140 0.120 0.115 0.120 0.110 0.100 Ic (A) Ic (mA) 0.105 0.100 0.095 0.080 0.060 0.090 0.085 0.040 0.080 0.075 0.020 0.070 +85c +25c -40c Tem perature 303 South Technology Court, Broomfield, CO 80021 0.000 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 Vc (Volts) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Evaluation Board Data (Vcc=VBIAS = 5.0V, Ic = 88mA) Bias Tee is substituted for DC feed inductor (L1) l S21 l vs. Frequency l S11 l vs. Frequency 35.0 0.0 30.0 -5.0 -10.0 +25c +85c 20.0 S11 (dB) S21 (dB) 25.0 -40c 15.0 -15.0 +25c +85c -20.0 -40c -25.0 10.0 -30.0 5.0 -35.0 0.0 -40.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 1.0 Frequency (GHz) 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) l S12 l vs. Frequency l S22 l vs. Frequency -15.0 0.0 -20.0 -10.0 S22 (dB) S12 (dB) -5.0 -25.0 +25c -20.0 +25c -25.0 +85c +85c -30.0 -15.0 -30.0 -40c -40c -35.0 -35.0 -40.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 Frequency (GHz) 303 South Technology Court, Broomfield, CO 80021 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Typical Evaluation Board Schematic for 5.0V Vcc C4 C3 16 Vbias NC NC VCC 1 L1 NC NC NC NC RFOUT RFIN RFIN C1 RFOUT NC NC NC NC Optional GND C2 NC Evaluation Board - Board material GETEK, 31mil thick, Dk=4.2, 1 oz. copper C4 C3 1 Component Values By Band Designator 500MHz 850MHz C3 1000pF 1000pF 1950MHz 2400MHz 1000pF C4* 1uF 1uF 1uF 1uF C1, C2 220pF 68pF 43pF 22pF L1 68 nH 33nH 22nH 18nH 1000pF L1 C1 C2 * C4 is optional depending on application and filtering. Not required for SGB device operation. Note: The amplifier can be run from a 8V supply by simply inserting a 33 ohm resistor in series with Vcc. 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Part Marking Part Number Ordering Information The part will be symbolized with an “SGB-6533” for Sn/Pb plating or “SGB-65Z” for RoHS green compliant product. Marking designator will be on the top surface of the package. Part Number Reel Size Devices/Reel SGB-6533 13” 3000 SGB-6533Z 13” 3000 Package Outline Drawing (Dimensions in mm) Recommended Land Pattern (dimensions in mm[in].): Recommended PCB Soldermask (SMOBC) for Land Pattern(dimensions in mm[in]): 1.58 [0.062] 0.50 [0.020] 0.26 [0.010] 0.50 [0.020] 0.25 [0.010] 0.38 [0.015] 0.53 [0.021] 0.29 [0.011] 0.21 [0.008] 1.58 [0.062] 3.17 [0.125] 0.75 [0.030] 0.005 CHAMFER (8PL) Ø0.38 [Ø0.015] Plated Thru (4PL) 303 South Technology Court, Broomfield, CO 80021 1.20 [0.047] 0.46 [0.018] 1.20 [0.047] Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-103099 Rev G