Product Description Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-4333 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-4333 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band. Vbias NC NC VCC NC DC – 3 GHz Active Bias Gain Block Product Features • • • • • • Functional Block Diagram Active Bias SGB-4333 NC High reliability SiGe HBT Technology Robust Class 1C ESD Simple and small size P1dB = 10.0dBm @ 1950MHz IP3 = 22.5 dBm @ 1950MHz Low Thermal Resistance = 76 C/W NC NC RFOUT RFIN Applications NC NC NC NC NC GND • • • 3V Battery operated applications LO buffer amp RF pre-driver and RF receive path Key Specifications Symbol fO Parameters: Test Conditions Z0 = 50Ω, VCC = 3.0V, Ic = 56mA, T = 30ºC) Unit Min. Frequency of Operation MHz DC Small Signal Gain – 850MHz S21 Small Signal Gain – 1950MHz dB 13.0 3000 14.5 16.0 14.0 Output Power at 1dB Compression – 850MHz OIP3 Max. 17.5 Small Signal Gain – 2400MHz P1dB Typ. Output Power at 1dB Compression – 1950MHz 11.5 dBm 8.5 10.0 Output Power at 1dB Compression – 2400MHz 9.5 Output IP3 – 850MHz 25.0 Output IP3 – 1950MHz dB 20.0 Output IP3 – 2400MHz 22.5 21.0 IRL Input Return Loss @ 1950MHz dB 8.5 10.5 ORL Output Return Loss @1950MHz dB 8.5 10.5 Ic Current mA 48 56 62 NF Noise Figure @1950MHz dB 4.0 5.0 ºC/W 76 Rth, j-l Thermal Resistance (junction - lead) The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103087 Rev E SGB-4333 DC-3GHz Active Bias Gain Block Detailed Performance Table: Vcc=3V, Ic=56mA, T=25C, Z=50ohms Symbol Parameter Units 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz G Small Signal Gain dB 18.1 17.8 17.5 14.5 14.0 11.8 OIP3 Output 3rd Order Intercept Point dBm 26.5 25.0 22.5 21.0 P1dB Output Power at 1dB Compression dBm 12.0 11.5 10.0 9.5 IRL Input Return Loss dB 17.3 15.6 14.2 10.5 10.7 8.1 ORL Output Return Loss dB 13.4 12.7 12.0 10.5 11.0 12.0 S12 Reverse Isolation dB 21.1 21.5 21.9 22.7 22.8 22.9 NF Noise Figure dB 5.0 3.5 3.5 4.0 4.4 5.0 Pin Out Description Pin # Function 1,2,4, 6, 7,8,11, 12,14 Description NC 3 RFIN RF input pin. A DC voltage should not be connected externally to this pin 5 GND An extra ground pin that is connected to the backside exposed paddle. Connection is optional. 10 RFOUT RF Output pin. Bias is applied to the Darlington stage thru this pin. 13 VBIAS This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke. 16 VCC This is Vcc for the active bias circuit. Backside GND The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the main thermal path. These are no connect pins. Leave them unconnected on the PC board. Simplified Device Schematic 16 15 14 Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 13 Absolute Maximum Ratings Parameters Current (Ic total) Active Bias 1 12 Device Voltage (VD) Power Dissipation 11 2 Operating Lead Temperature (TL) RF Input Power 10 3 Storage Temperature Range Operating Junction Temperature (TJ) 9 4 Value Unit 120 mA 5 V 0.4 W -40 to +85 ºC 20 dBm -40 to +150 ºC +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH’ j-l 5 6 7 8 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103087 Rev E SGB-4333 DC-3GHz Active Bias Gain Block Evaluation Board Data (Vcc=VBIAS = 3.0V, Ic = 56mA) Bias Tee substituted for DC feed inductor (L1) OIP3 vs. Frequency Gain vs Frequency 19.0 30.0 28.0 18.0 26.0 24.0 OIP3 (dBm) Gain (dB) 17.0 16.0 15.0 14.0 13.0 22.0 20.0 18.0 +25c 16.0 +25c +85c 14.0 +85c -40C -40C 12.0 12.0 10.0 0.4 0.9 1.4 1.9 2.4 0.4 0.9 1.4 Frequency (GHz) P1dB vs. Frequency 2.4 Noise Figure vs. Frequency 13.0 7.0 6.0 Noise Figure (dB) 12.0 P1dB (dBm) 1.9 Frequency (GHz) 11.0 10.0 9.0 +25c 5.0 4.0 3.0 +25c +85c 2.0 -40c +85c 8.0 1.0 -40C 7.0 0.0 0.4 0.9 1.4 1.9 2.4 0.0 0.5 Frequency (GHz) 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Current vs. Voltage Ic vs. Temperature 0.100 0.090 0.0630 0.080 0.0620 0.070 0.060 0.0600 Ic (A) Ic (mA) 0.0610 0.0590 0.050 0.040 0.0580 0.030 0.0570 0.020 0.0560 0.010 0.0550 +85c +25c -40c Temperature 303 South Technology Court, Broomfield, CO 80021 0.000 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 Vc (Volts) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103087 Rev E SGB-4333 DC-3GHz Active Bias Gain Block Evaluation Board Data (Vcc=VBIAS = 3.0V, Ic = 56mA) Bias Tee substituted for DC feed inductor (L1) l S21 l vs. Frequency l S11 l vs. Frequency 20.0 0.0 18.0 +25c 16.0 -5.0 +85c 14.0 S 11 (dB) S 21 (dB) -40c 12.0 10.0 8.0 -10.0 -15.0 +25c 6.0 4.0 +85c -20.0 -40c 2.0 0.0 -25.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 1.0 Frequency (GHz) 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) l S12 l vs. Frequency l S22 l vs. Frequency -10.0 0.0 -12.0 -2.0 -14.0 -4.0 +25c -16.0 -18.0 -6.0 S 22 (dB) S12 (dB) +85c -40c -20.0 -22.0 +25c -8.0 +85c -40c -10.0 -24.0 -12.0 -26.0 -14.0 -28.0 -16.0 -30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 303 South Technology Court, Broomfield, CO 80021 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103087 Rev E SGB-4333 DC-3GHz Active Bias Gain Block Typical Evaluation Board Schematic for 3.0V Vcc C4 C3 16 Vbias NC NC VCC 1 L1 NC NC NC NC RFOUT RFIN RFIN C1 RFOUT NC NC NC NC Optional GND C2 NC Evaluation Board - Board material GETEK, 31mil thick, Dk=4.2, 1 oz. copper Component Values By Band C4 C3 1 303 South Technology Court, Broomfield, CO 80021 500MHz 850MHz C3 1000pF 1000pF 1950MHz 2400MHz 1000pF 1000pF C4* 1uF 1uF 1uF 1uF C1, C2 220pF 68pF 43pF 22pF L1 68 nH 33nH 22nH 18nH * C4 is optional depending on application and filtering. Not required for SGB device operation. L1 C1 Designator C2 Phone: (800) SMI-MMIC 5 Note: The amplifier can be run from a 5V supply by simply inserting a 33 ohm resistor in series with Vcc. http://www.sirenza.com EDS-103087 Rev E SGB-4333 DC-3GHz Active Bias Gain Block Part Number Ordering Information Part Marking Part Number Reel Size Devices/Reel SGB-4333 13” 3000 The part will be symbolized with an “SGB-4333” marking designator on the top surface of the package. Package Outline Drawing (Dimensions in mm) Recommended Land Pattern (dimensions in mm[in].): Recommended PCB Soldermask (SMOBC) for Land Pattern(dimensions in mm[in]): 1.58 [0.062] 0.50 [0.020] 0.26 [0.010] 0.50 [0.020] 0.38 [0.015] 0.25 [0.010] 0.53 [0.021] 0.29 [0.011] 0.21 [0.008] 1.58 [0.062] 0.75 [0.030] 0.005 CHAMFER (8PL) 3.17 [0.125] Ø0.38 [Ø0.015] Plated Thru (4PL) 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 1.20 [0.047] 0.46 [0.018] 1.20 [0.047] http://www.sirenza.com EDS-103087 Rev E