Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-2433 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-2433 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band. Functional Block Diagram Vbias NC NC VCC Active Bias NC NC NC NC SGB-2433 DC – 4 GHz Active Bias Gain Block Product Features • • • • • • High reliability SiGe HBT Technology Robust Class 1C ESD Simple and small size P1dB = 6.9 dBm @ 1950MHz IP3 = 18.0 dBm @ 1950MHz Low Thermal Resistance = 110 C/W RFOUT RFIN Applications NC NC NC NC NC GND • • • 3V Battery operated applications LO buffer amp RF pre-driver and RF receive path Key Specifications Symbol fO Parameters: Test Conditions Z0 = 50Ω, VCC = 3.0V, Ic = 25mA, T = 30ºC) Unit Min. Frequency of Operation MHz DC Small Signal Gain – 850MHz S21 Small Signal Gain – 1950MHz dB 15.7 4000 17.2 18.7 16.2 Output Power at 1dB Compression – 850MHz Output Power at 1dB Compression – 1950MHz 7.7 dBm 5.4 Output Power at 1dB Compression – 2400MHz 6.9 6.2 Output IP3 – 850MHz OIP3 Max. 19.1 Small Signal Gain – 2400MHz P1dB Typ. 19.5 Output IP3 – 1950MHz dB 16.0 Output IP3 – 2400MHz 18.0 18.0 IRL Input Return Loss @ 1950MHz dB 10 13.4 ORL Output Return Loss @ 1950MHz dB 10 13.6 Ic Current mA 21 25 29 NF Noise Figure @1950MHz dB 3.5 4.5 ºC/W 110 Rth, j-l Thermal Resistance (junction - lead) The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103083 Rev C Preliminary Data Sheet SGB-2433 DC-4GHz Active Bias Gain Block Detailed Performance Table: Vcc=3V, Ic=25mA, T=25C, Z=50ohms Symbol Parameter Units 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz G Small Signal Gain dB 19.7 19.5 19.1 17.2 16.2 14.0 18.0 OIP3 Output 3rd Order Intercept Point dBm 20.0 19.5 18.0 P1dB Output Power at 1dB Compression dBm 8.3 7.7 6.9 6.2 IRL Input Return Loss dB 25.0 19.9 17.1 13.4 12.7 10.5 ORL Output Return Loss dB 20.5 18.9 17.1 13.6 13.1 13.0 S12 Reverse Isolation dB 22.4 22.6 22.9 23.7 23.9 24.5 NF Noise Figure dB 3.8 3.2 3.2 3.5 3.9 4.3 Pin Out Description Pin # Function 1,2,4, 6, 7,8,11, 12,14 NC 3 RFIN RF input pin. A DC voltage should not be connected externally to this pin 5 GND An extra ground pin that is connected to the backside exposed paddle. Connection is optional. 10 RFOUT RF Output pin. Bias is applied to the Darlington stage thru this pin. 13 VBIAS This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke. 16 VCC This is Vcc for the active bias circuit. GND The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the main thermal path. Backside Description These are no connect pins. Leave them unconnected on the PC board. Simplified Device Schematic 16 15 14 13 Absolute Maximum Ratings Parameters Active Bias 1 12 Value Unit Current (Ic total) 60 mA Device Voltage (VD) 5 V 0.2 W Power Dissipation 11 2 Operating Lead Temperature (TL) RF Input Power 10 3 Storage Temperature Range Operating Junction Temperature (TJ) 9 4 -40 to +85 ºC 20 dBm -40 to +150 ºC +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH’ j-l 5 6 7 8 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103083 Rev C Preliminary Data Sheet SGB-2433 DC-4GHz Active Bias Gain Block Evaluation Board Data (Vcc=VBIAS = 3.0V, Ic = 25mA) Bias Tee substituted for DC feed inductor (L1) OIP3 vs. Frequency Gain vs Frequency 21.0 22.0 20.0 20.0 OIP3 (dBm) Gain (dB) 19.0 18.0 17.0 16.0 18.0 16.0 +25c 14.0 +85c +25c 0c +85c 15.0 12.0 -20c -40c -40c 10.0 14.0 0.4 0.9 1.4 1.9 0.4 2.4 0.9 1.4 1.9 2.4 Frequency (GHz) Frequency (GHz) Noise Figure vs. Frequency P1dB vs. Frequency 6.0 10.0 9.0 5.0 Noise Figure (dB) 8.0 P1dB (dBm) 7.0 6.0 5.0 +25c 4.0 +85c 3.0 0c 2.0 3.0 +25c 2.0 +85c -40c 1.0 -20c 1.0 4.0 -40c 0.0 0.0 0.4 0.9 1.4 1.9 0.0 2.4 0.5 1.5 2.0 2.5 3.0 3.5 3.6 3.8 Current vs. Voltage Ic vs. Tem perature 0.040 0.035 0.0300 0.0280 0.030 0.0260 0.025 Ic (A) Ic (mA) 1.0 Frequency (GHz) Frequency (GHz) 0.0240 0.020 0.0220 0.015 0.0200 0.010 0.0180 0.005 0.0160 +85c +25c 0c -20c -40c Tem perature 303 South Technology Court, Broomfield, CO 80021 0.000 2.4 2.6 2.8 3.0 3.2 3.4 Vc (Volts) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103083 Rev C Preliminary Data Sheet SGB-2433 DC-4GHz Active Bias Gain Block Evaluation Board Data (Vcc=VBIAS = 3.0V, Ic = 25mA) Bias Tee substituted for DC feed inductor (L1) l S21 l vs. Frequency l S11 l vs. Frequency 22.0 0.0 20.0 -5.0 18.0 +25c -40c S11 (dB) S 21 (dB) -10.0 +85c 16.0 14.0 12.0 -15.0 +25c -20.0 +85c 10.0 -40c -25.0 8.0 6.0 -30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 1.0 3.0 4.0 5.0 6.0 l S22 l vs. Frequency l S12 l vs. Frequency 0.0 -20.0 -21.0 -22.0 +25c -5.0 +25c +85c +85c -40c -40c -23.0 S22 (dB) S12 (dB) 2.0 Frequency (GHz) Frequency (GHz) -24.0 -10.0 -15.0 -25.0 -20.0 -26.0 -25.0 -27.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 303 South Technology Court, Broomfield, CO 80021 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103083 Rev C Preliminary Data Sheet SGB-2433 DC-4GHz Active Bias Gain Block Typical Evaluation Board Schematic for 3.0V Vcc C4 C3 Vbias NC NC VCC RFIN NC NC NC RFIN C1 L1 NC RFOUT RFOUT NC C2 NC NC NC NC GND Option Evaluation Board - Board material GETEK, 31mil thick, Dk=4.2, 1 oz. copper Component Values By Band C4 C3 1 303 South Technology Court, Broomfield, CO 80021 500MHz 850MHz C3 1000pF 1000pF 1950MHz 2400MHz 1000pF 1000pF C4* 1uF 1uF 1uF 1uF C1, C2 220pF 68pF 43pF 22pF L1 68 nH 33nH 22nH 18nH * C4 is optional depending on application and filtering. Not required for SGB device operation. L1 C1 Designator C2 Phone: (800) SMI-MMIC 5 Note: The amplifier can be run from a 5V supply by simply inserting a 82 ohm resistor in series with Vcc. http://www.sirenza.com EDS-103083 Rev C Preliminary Data Sheet SGB-2433 DC-4GHz Active Bias Gain Block Part Number Ordering Information Part Marking The part will be symbolized with an “SGB-2433” marking designator on the top surface of the package. Part Number Reel Size Devices/Reel SGB-2433 13” 3000 Package Outline Drawing (Dimensions in mm) Recommended Land Pattern: DIMENSIONS IN INCHES 0.062 0.030 Caution: ESD Sensitive 0.062 0.020 0.010 0.015 0.011 0.008 Appropriate precaution in handling, packaging and testing devices must be observed. Ø0.015 PLATED THRU (4PL) 0.005 CHAMFER (8PL) 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-103083 Rev C