Advanced Information SUF-6000 2-16 GHz Broadband pHEMT Amplifier Product Description Sirenza Microdevices’ SUF-6000 is a high gain broadband 2-stage amplifier covering 2-16 GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. Its compact size make it ideal for high-density multi-chip module applications. Gain & Return Loss vs. Frequency GSG Probe Data 24 Product Features • • • • • • • • 0 20 -5 16 -10 ORL 12 -15 8 -20 4 Return Loss (dB) Gain (dB) Gain Applications • • • • • -25 IRL 0 -30 2 4 6 8 10 12 14 16 18 Broadband Performance High Gain = 17.4 dB @ 14 GHz P1dB = 12.0 dBm @ 14 GHz IP3 = 24.9 dBm @ 14 GHz 5V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Circuit Broadband Communications Test Instrumentation Military & Space LO and IF Mixer Applications High IP3 RF Driver Applications 20 Frequency (GHz) Symbol Parameters Gp Units Small Signal Power Gain dB P1dB Output Power at 1dB Compression dBm OIP3 Output Third Order Intercept Point dBm NF Noise Figure dB IRL Input Return Loss dB ORL Output Return Loss dB Isol Reverse Isolation dB VD ID Device Operating Voltage V Device Operating Current mA Device Gain Temperature Coefficient dB/°C Thermal Resistance (junction-to-backside) V =5V I = 80 mA Typ. °C/W ΔG/ΔT Rth, j-l Test Conditions: Test Conditions: S D Frequency 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz Min. Typ. Max. 18.0 20.5 17.4 13.0 14.0 12.0 25.3 27.5 24.9 5.0 4.7 6.0 -14.2 -19.7 -12.1 -26.2 -19.4 -11.5 -36.9 -34.4 -32.6 5.0 107 TBD TBD OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm VD = 5.0V, ID = 107mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm TL = 25ºC ZS = ZL = 50 Ohms Measured with Bias Tees ZS = ZL = 50 Ohms, 25C, GSG Probe Data With Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105420 Rev A Advanced Information SUF-6000 2-16 GHz Broadband pHEMT Amplifier Typical Performance (GSG Probe Data) 16 20 14 16 P1dB (dBm) Gain (dB) |S21| vs. Frequency 24 12 25C -40C 8 85C P1dB vs. Frequency 12 10 -20C 25C 8 4 0 85C 6 2 4 6 8 10 12 14 16 18 20 2 4 6 Frequency (GHz) |S11| vs. Frequency 0 0 -5 -5 -10 -10 10 12 14 16 18 |S22| vs. Frequency 25C -40C S22 (dB) S11 (dB) 8 Frequency (GHz) -15 25C -20 -40C 85C -15 -20 85C -25 -25 -30 2 4 6 8 10 12 14 16 18 -30 20 2 4 6 8 Frequency (GHz) 10 12 14 16 18 20 Frequency (GHz) OIP3 vs. Frequency (0dBm/tone, 1MHz spacing) NF vs. Frequency 10 28 8 NF (dB) OIP3 (dBm) 26 24 22 6 4 -20C -20C 25C 2 25C 20 85C 85C 0 18 2 4 6 8 10 12 14 16 18 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 2 4 6 8 10 12 14 16 18 Frequency (GHz) Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105420 Rev A Advanced Information SUF-6000 2-16 GHz Broadband pHEMT Amplifier Typical Performance (GSG Probe Data) Freq VD (GHz) (V) 2 5 2.4 5 3 5 4 5 6 5 10 5 12 5 Test Conditions: 14 5 16 5 Current Gain P1dB OIP3 S11 S22 NF (mA) 107 107 107 107 107 107 107 107 107 (dB) 18.0 18.9 19.6 20.2 20.5 19.6 18.4 17.4 14.5 (dBm) 13.0 13.6 13.7 14.1 14.0 13.2 12.9 12.0 10.6 (dBm) 25.3 26.1 26.8 26.8 27.5 26.4 25.9 24.9 23.8 (dB) -14.2 -16.2 -18.6 -20.0 -19.7 -26.3 -19.9 -12.1 -7.9 (dB) -26.2 -32.0 -32.2 -26.9 -19.4 -13.3 -12.1 -11.5 -12.5 (dB) 5.0 5.0 5.0 5.0 4.7 5.3 5.6 6.0 7.0 GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C Test Conditions: Parameter Absolute Limit Max Device Current (ID) 163mA Max Device Voltage (VD) 5.5V Max RF Input Power 10dBm Max Dissipated Power Max Junction Temperature (TJ) 150C Operating Temperature Range (TL) -40 to +85C Max Storage Temp. -65 to +150C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Current Variation vs. Temperature Bias Conditions should also satisfy the following expression: TL=Backside of die IDVD < (TJ - TL) / RTH, j-l Current vs. Voltage 120 ELECTROSTATIC SENSITIVE DEVICE Appropriate precautions in handling, packaging and testing devices must be observed. Current (mA) 115 110 105 -20C 100 25C 95 90 4.75 85C 4.85 4.95 5.05 5.15 5.25 Volatage (V) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-105420 Rev A Advanced Information SUF-6000 2-16 GHz Broadband pHEMT Amplifier Pad Description 2 1 Pad # 1 2 Die Bottom Function Description This pad is DC coupled and matched to 50 Ohms. An external DC block is required. This pad is DC coupled and matched to 50 Ohms. RFOUT / Bias Bias is applied through this pad. RFIN GND Notes: 1. All Dimensions in Inches [Millimeters]. 2. No connection required for unlabeled bond pads. 3. Die Thickness is 0.004 (0.100). 4. Typical bond pad is 0.004 (0.100) square. 5. Backside metalization: Gold. 6. Backside is Ground. 7. Bond pad metalization: Gold. Die bottom must be connected to RF/DC ground using silver-filled conductive epoxy. Device Assembly +5V Interconnect Wire or Ribbon Bypass Cap(s) Choke 50Ω Line 50Ω Line DC Block DC Block 3-5 mil gap 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-105420 Rev A