High-speed Buffer Amplifier for CCD Image Sensor CXA3691AEN Description The CXA3691AEN is a high-speed buffer amplifier IC. (Applications: CCD image sensor output buffers, Digital still cameras, Camcorders, Other general buffers) Features Power consumption: 24mW (typ.) (IDRV = 50μA (220kΩ when VCC = 15V), ISF pin connected to GND, during no signal) Push-pull output High-speed response: 500V/μs (IDRV = 50μA (220kΩ when VCC = 15V), CL = 20pF) Internal sink current mode for CCD with open source output (Settable by external resistance RISF) Enables to set the responsibility by changing the drive current by an external resistor Structure Bipolar silicon monolithic IC Absolute Maximum Ratings (Ta = 25°C) Supply voltage VCC Supply voltage IN Storage temperature Tstg Allowable power dissipation PD 16 V GND – 0.3 to VCC + 0.3 V –65 to +150 °C 0.28 W (when mounted on a two-layer board; 50mm × 50mm, t = 1.6mm) Recommended Operating Conditions Supply voltage VCC 9.0 to 15.5 V Operating temperature Ta –20 to +75 °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E07712A82 CXA3691AEN Block Diagram and Pin Configuration (Top View) ISF VCC IDRV 6 5 4 1 2 3 IN GND OUT Pin Description and I/O Pin Equivalent Circuit Pin No. 2 5 Symbol I/O GND VCC — — Standard voltage level 0V 15V Equivalent circuit — — Description GND. Supply voltage input. VCC 10 × IDRV 2k 1 IN I CCD output voltage Input. 1 58 × IISF 2k 10 × IDRV GND External resistor connection for setting the sink current for CCD with open source output. Connect an external resistor between this pin and VCC (Pin 5). Connect this pin to GND (Pin 2) when not using this function. * The minimum value of the external resistance should be 100kΩ (when VCC = 15V). VCC 6 ISF I — 6 30k 20k GND VCC 50 3 OUT O ≈IN 3 Output. 50 GND VCC 4 IDRV I — 4 30k 20k GND -2- External resistor connection for setting the drive current. Connect an external resistor between this pin and VCC (Pin5). * The minimum value of the external resistance should be 100kΩ (when VCC = 15V). CXA3691AEN Electrical Characteristics (Ta = 25°C, VCC = 15V, RIDRV = 220kΩ, ISF pin: connected to GND) DC Characteristics Item Supply current Symbol Measurement conditions Min. Typ. Max. Unit ICC IN = 10V, RIDRV = 220kΩ 1.4 1.6 1.8 mA — 0.999 — V/V –100 — 100 mV *1 IN: 10Vdc ΔV = 1V GAIN = ΔOUT/ΔV Voltage gain VGAIN I/O offset voltage VOFFSET IN = 10V VOFFSET = OUT-IN I/O voltage range VRANGE RIDRV = 100kΩ RIDRV = 150kΩ RIDRV = 220kΩ RIDRV = 330kΩ 3.3 2.9 2.5 2.1 — — — — VCC – 2.0 VCC – 1.85 VCC – 1.8 VCC – 1.7 V Input bias current IBIAS IN = 10V, ISF = 0V –15 –5 6 μA Sync current ISINK IN = 10V, RISF = 220kΩ 2.6 2.9 3.2 mA *1 Voltage gain 10.5V IN ΔV = 1V 9.5V OUT ΔOUT -3- CXA3691AEN AC Characteristics (Ta = 25°C, VCC = 15V, IDRV = 50μA (220kΩ when VCC = 15V), ISF pin: connected to GND, RL = 15Ω, CL = 20pF) Item Symbol Measurement conditions Bandwidth GBW IN = 50mVp-p Rise time TRISE IN = 9.5 to 10.5V 10 to 90% Fall time TFALL IN = 10.5 to 9.5V 10 to 90% I/O delay time TDELAY IN = 9.5 to 10.5V @50% Min. Typ. Max. Unit — 220 — MHz — 2.5 3.5 ns — 3.0 4.0 ns 0.9 1.0 2.0 ns *1 *1 *1 *1 Rise time, fall time and I/O delay time 10.5V 50% IN 9.5V 90% 90% 50% OUT 10% TFALL 10% TRISE TDELAY -4- CXA3691AEN Evaluation Circuit 220kΩ 220kΩ 1000pF 47µF VCC ISF 6 IDRV 4 5 1 3 2 IN GND 15Ω OUT 20pF A 15V GND -5- CXA3691AEN Description of Operation Current Settings 1. Output Drive Current The small signal output impedance of the OUT pin (Pin 3) can be set by connecting the IDRV pin (Pin 4) to VCC through a resistor. The inflow current to the IDRV pin is multiplied by 10 times inside the IC, and flows as the output stage idling current. The IDRV pin has an internal 50kΩ resistor, so the inflow current to the IDRV pin can be calculated as follows. IIDRV = (VCC – VBE × 2)/(RIDRV + 50kΩ) = (15 – 1.46)/270kΩ = 50.1μA Here, VCC = 15V, VBE = 0.73V (typ.), and RIDRV = 220kΩ. The small signal output impedance at this time can be calculated as follows. ROUT = (26mV/(10 × IIDRV))/2 = (26mV/501μA)/2 = 26Ω 2. Sink Current for CCD with open source output The sink current of the IN pin (Pin 6) can be set by connecting the ISF pin (Pin 1) to VCC through a resistor. This sink current can be used as the CCD output stage source follower drive current. The inflow current to the ISF pin is multiplied by 58 times inside the IC, and flows as the sink current. The ISF pin has an internal 50kΩ resistor, so the inflow current to the ISF pin can be calculated as follows. IISF = (VCC – VBE × 2)/(RISF + 50kΩ) = (15 – 1.46)/270kΩ = 50.1μA Here, VCC = 15V, VBE = 0.73V (typ.), and RISF = 220kΩ. The sink current at this time can be calculated as follows. Isink = 58 × IISF = 2.9mA Note) This IC operation depends on IDRV and ISF. This specification is described based on IDRV of 220kΩ when VCC = 15V. However , set it to 180kΩ to occur the same current when using under the condition that VCC = 13V. [IDRV and ISF vs external resistor] Current (μA) 90 68 50 35 26 Unit When VCC = 15V 100 150 220 330 470 kΩ When VCC = 13V 78 120 180 270 390 kΩ -6- CXA3691AEN Example of Representative Characteristics (Upper side) I/O voltage range vs. IDRV pin setting resistance (Lower side) I/O voltage range vs. IDRV pin setting resistance 5.0 VCC – 0 Ta = 25˚C Ta = 25˚C 4.5 0.5 4.0 1.5 I/O voltage [V] I/O voltage [V] 1.0 VCC = 13V VCC = 15V 2.0 2.5 3.5 3.0 VCC = 15V 2.5 VCC = 13V 2.0 1.5 3.0 1.0 3.5 4.0 0.5 0 50 100 150 200 250 300 0 350 0 50 100 150 200 250 300 350 IDRV pin setting resistance [kΩ] IDRV pin setting resistance [kΩ] Current consumption vs. IDRV pin setting resistance Sink current vs. ISF pin setting resistance 4.0 5.0 Ta = 25˚C, RIDRV = 220kΩ, VIN = VCC – 5V 4.5 4.0 3.0 Sync current [mA] Current consumption [mA] Ta = 25˚C, VIN = VCC – 5V 3.5 2.5 VCC = 15V 2.0 VCC = 13V 1.5 1.0 3.5 3.0 VCC = 15V 2.5 VCC = 13V 2.0 1.5 1.0 0.5 0 0.5 0 50 100 150 200 250 300 0 350 0 50 100 150 200 250 300 350 ISF pin setting resistance [kΩ] IDRV pin setting resistance [kΩ] Current consumption vs. Supply voltage Current consumption vs. Operating temperature 2.0 2.0 VCC = 15V, RIDRV = 220kΩ, VIN = VCC – 5V Ta = 25˚C, RIDRV = 220kΩ, VIN = VCC – 5V Current consumption [mA] Current consumption [mA] 1.8 1.6 1.4 1.2 1.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 1.8 1.6 1.4 1.2 –50 –25 0 25 50 Operating temperature [˚C] Supply voltage [V] -7- 75 100 CXA3691AEN I/O offset voltage vs. Supply voltage I/O offset voltage vs. Operating temperature 20.0 20.0 VCC = 15V, RIDRV = 220kΩ, VIN = VCC – 5V 10.0 10.0 I/O offset voltage [mV] I/O offset voltage [mV] Ta = 25˚C, RIDRV = 220kΩ, VIN = VCC – 5V 0 –10.0 –20.0 10.0 11.0 12.0 13.0 14.0 15.0 0 –10.0 –20.0 –50 16.0 –25 25 50 75 100 Operating temperature [˚C] Supply voltage [V] Input bias current vs. Supply voltage Input bias current vs. Operating temperature 5.0 5.0 VCC = 15V, RIDRV = 220kΩ, VIN = VCC – 5V Ta = 25˚C, RIDRV = 220kΩ, VIN = VCC – 5V 0 Input bias current [µA] 0 Input bias current [µA] 0 –5.0 –10.0 –15.0 10.0 11.0 12.0 13.0 14.0 15.0 –5.0 –10.0 –15.0 –50 16.0 –25 0 25 50 75 100 Operating temperature [˚C] Supply voltage [V] Sink current vs. Supply voltage Sink current vs. Operating temperature 3.5 3.4 VCC = 15V, RIDRV, RISF = 220kΩ, VIN = VCC – 5V Ta = 25˚C, RIDRV, RISF = 220kΩ, VIN = VCC – 5V 3.2 Sync current [mA] Sync current [mA] 3.0 2.5 3.0 2.8 2.0 2.6 1.5 10.0 2.4 11.0 12.0 13.0 14.0 15.0 16.0 –50 –25 0 25 50 Operating temperature [˚C] Supply voltage [V] -8- 75 100 CXA3691AEN Tr and Tf vs. Supply voltage Tr and Tf vs. Operating temperature 6.0 4.0 3.5 5.0 Tf 3.0 Tr Tf Tr and Tf [ns] Tr and Tf [ns] 4.0 Tr 3.0 2.0 Ta = 25˚C, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 1.0 0 10.0 11.0 12.0 13.0 14.0 2.5 2.0 1.5 VCC = 15V, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 1.0 0.5 15.0 0 –50 16.0 2.00 1.75 1.75 1.50 1.50 I/O delay time [ns] 2.00 1.25 1.00 0.75 Ta = 25˚C, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 12.0 11.0 13.0 14.0 75 100 VCC = 15V, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 1.25 1.00 0.75 0.50 0.25 15.0 16.0 0 –50 0 –25 25 50 75 Supply voltage [V] Operating temperature [˚C] Positive pulse response Negative pulse response 0.2V/div 0 10.0 50 I/O delay time vs. Operating temperature 0.2V/div I/O delay time [ns] I/O delay time vs. Supply voltage 0.25 25 Operating temperature [˚C] Supply voltage [V] 0.50 0 –25 VCC = 15V, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω Input rise, fall time = 2.0ns T Input 100 Output T 10.0V 10.0V T Output T Input VCC = 15V, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω Input rise, fall time = 2.0ns Ch1 200mVΩ Ch2 200mVΩ M 1.00ns Ch1 10.0V 1.0ns/div -9- Ch1 200mVΩ Ch2 200mVΩ M 1.00ns Ch1 10.0V 1.0ns/div CXA3691AEN Application Circuit 1 (when using CCD with open source output ) 220kΩ 220kΩ 1000pF VCC ISF 6 IDRV 4 5 1 3 2 IN 0.1µF GND OUT 15V GND CDS/ADC CCD Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. - 10 - CXA3691AEN Application Circuit 2 (when using CCD with internal current source) 220kΩ 1000pF VCC ISF 6 IDRV 4 5 1 3 2 IN 0.1µF GND OUT 15V GND CDS/ADC CCD Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. - 11 - CXA3691AEN Notes on Operation Provide the widest GND pattern possible on the board. Use a 1000pF (recommended) and a 0.1μF (recommended) ceramic capacitors in parallel for the bypass capacitor connected between the power supply and GND, and connect them as close to the IC pins as possible. Load capacitance causes the input/output wiring response to worsen and results in noise. Use the shortest wiring layout possible, and shield it with GND. When the output pin (Pin 3) is shorted to either the power supply or GND, an overcurrent may flow to the output stage elements and damage them. When the input pin (Pin 1) is shorted to GND, an overcurrent may flow to the internal parasitic elements and damage them. - 12 - CXA3691AEN Package Outline (Unit: mm) 6PIN WSON 4x 0.1 S A B 2.0 1.3 ± 0.1 0.65 0.65 A + 0.10 0.13 − 0.03 4 X S + 0.1 0.2 − 0.05 (0.2) + 0.1 0.13 − 0.03 3 2 (0.11) 1 0.3 ± 0.1 φ0.07 M S A B 0.2 ± 0.1 2x B 0.08 S 2.1 0.1 S B 5 6 1.7 PIN 1 INDEX 0.2 ± 0.1 0.75 ± 0.05 0.1 ± 0.03 0.1 ± 0.03 + 0.1 6 - 0.20 − 0.05 0.3 ± 0.1 DETAIL X PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EPOXY RESIN TERMINAL TREATMENT Sn-Bi WSON-6P-051 EIAJ CODE TERMINAL MATERIAL COPPER JEDEC CODE PACKAGE MASS 0.008g LEAD PLATING SPECIFICATIONS ITEM - 13 - SPEC. LEAD MATERIAL COPPER ALLOY SOLDER COMPOSITION Sn-Bi Bi:1-4wt% PLATING THICKNESS 5-18µm Sony Corporation