High-speed Buffer Amplifier for CCD Image Sensor CXA3741AUR Description The CXA3741UR is a high-speed buffer amplifier IC with built-in switches. (Applications: CCD image sensor output buffers, digital still cameras, camcorders, other general buffers) Features Power consumption: 26 mW (typ.) (IDRV = 50μA (220kΩ when VCC = 15V), ISF current = 0, during no signal) Push-pull output High-speed response: 500 V/μs (IDRV = 50μA (220kΩ when VCC = 15V), CL = 20pF) Internal sink current mode for CCD source follower output. Settable by external resistance RISF Sink current and drive current with each built-in switch. Each current value can be set by an external resistance. Structure Bipolar silicon monolithic IC Absolute Maximum Ratings (Ta = 25°C) Supply voltage VCC Input voltage IN Storage temperature Tstg Allowable power dissipation PD 16 V GND – 0.3 to VCC + 0.3 V –65 to +150 °C 0.73 W (when mounted on a two-layer board; 30mm × 30mm, t = 0.8mm) Recommended Operating Conditions Supply voltage Operating temperature VCC Ta 9 to 15.5 V –20 to +75 °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E07711 CXA3741AUR GND IDRV1 IDRV0 SFCNT Block Diagram and Pin Description 4 3 2 1 16 DRVCNT VCC 5 ISF0 6 15 GND ISF1 7 14 OUT 13 NC -2- IN 11 12 NC 10 GND 9 GND NC 8 CXA3741AUR Pin Description and I/O Pin Equivalent Circuit Pin No. Symbol I/O Standard voltage level Equivalent circuit Description 4 GND — 0V — GND 5 VCC — 15V — Power supply 9 GND — 0V — GND 11 GND — 0V — GND 15 GND — 0V — GND 1 SFCNT I CMOS VCC 10µA 10µA 2k 1 Switches the drive current setting. When the DRVCNT pin (Pin 16) input logic is low, the drive current is set according to the current set by the IDRV0 pin (Pin 2). When high, the drive current is set according to the current set by the IDRV1 pin (Pin 3). 16 2k 60k 60k 16 DRVCNT I CMOS GND VCC 2 IDRV0 I — 30k 2 3 30k 3 IDRV1 I — 20k GND -3- Switches the sink current setting for CCD with open source output. When the SFCNT pin (Pin 16) input logic is low, the sink current is set according to the current set by the ISF0 pin (Pin 6). When high, the sink current is set according to the current set by the ISF1 pin (Pin 7). 20k External resistor connection for setting the drive current. Connect external resistors between these pins and VCC (Pin 5). When not using this function, connect these pins to GND. *The minimum value for external resistors should be 100kΩ (when VCC is 15V). CXA3741AUR Pin No. Symbol I/O Standard voltage level Equivalent circuit Description VCC 6 ISF0 I — 30k 6 7 30k 7 ISF1 I — 20k 20k 1.5k 10 × IDRV GND External resistor connection for setting the CCD with open source output sink current. Connect external resistors between these pins and VCC (Pin 5). When not using this function, connect these pins to GND. *The minimum value for external resistors should be 100kΩ (when VCC is 15V). VCC 10 IN I CCD output voltage 10 Input 10µA 58 × IISF 10 × IDRV 2k GND VCC 50 14 OUT O ≈IN 14 50 GND -4- Output CXA3741AUR Electrical Characteristics (Ta = 25°C, VCC = 15V, RIDRV0 = 220kΩ, RIDRV1 = 470kΩ, ISF0 and ISF1 pins: connected to GND) Item Measurement conditions Symbol Min. Typ. Max. Unit 1.5 1.7 1.9 mA — 0.999 — V/V –100 — 100 mV IN = 10V, RDRV0 = 220kΩ, RDRV1 = 470kΩ DRVCNT = 0V Supply current ICC Voltage gain VGAIN I/O offset voltage VOFFSET IN = 10V VOFFSET = OUT-IN VRANGE RIDRV = 100kΩ RIDRV = 150kΩ RIDRV = 220kΩ RIDRV = 330kΩ 3.3 2.9 2.5 2.1 — — — — VCC – 2.0 VCC – 1.85 VCC – 1.8 VCC – 1.7 V IN = 10V, ISF0, 1 = 0V, IDRV0, 1 = 220kΩ –6.0 3.0 20 μA IN = 10V, ISF0, 1, IDRV0, 1 = 0V 3.0 9.0 15 μA IN = 10V, RISF0 = 220kΩ, RISF1 = 470kΩ SFCNT = 0V 2.6 2.9 3.2 mA 2.025 — — V — — 0.825 V *1 I/O voltage range Input bias current IBIAS Sink current ISINK Switch control voltage “High” VcontH Switch control voltage “Low” VcontL *1 IN: F10Vdc ΔV = 1V GAIN = ΔOUT/ΔV VDD = 3.0 ± 0.3V Voltage gain 10.5V ΔV = 1V IN 9.5V ΔOUT OUT -5- CXA3741AUR AC Characteristics (Ta = 25°C, IDRV = 50μA (220kΩ when VCC = 15V), ISF0 and ISF1 pins: connected to GND, RL = 15Ω, CL = 20pF) Item Measurement conditions Symbol Bandwidth GBW IN = 50mVp-p Rise time TRISE IN = 9.5 to 10.5V 10 to 90% Fall time TFALL IN = 10.5 to 9.5V 10 to 90% I/O delay time TDELAY IN = 9.5 to 10.5V @50% Min. Typ. Max. Unit — 220 — MHz — 2.5 3.5 ns — 3.0 4.0 ns 0.9 1.0 2.0 ns *1 *1 *1 *1 Rise time, fall time and I/O delay time 10.5V 50% IN 9.5V 90% 90% 50% OUT 10% 10% TFALL TRISE -6- TDELAY CXA3741AUR Evaluation Circuit 470kΩ SFCNT IDRV0 GND IDRV1 220kΩ 4 3 2 1 1000pF VCC ISF0 5 16 Current Mirror 6 220kΩ 15 DRVCNT GND Current Mirror ISF1 7 14 OUT 15Ω 470kΩ 20pF NC 8 13 47µF -7- 12 NC IN GND 11 GND 15.0V 10 GND 9 NC CXA3741AUR Description of Operation Current Settings 1. Output Drive Current The small signal output impedance of the OUT pin (Pin 14) can be set by connecting the IDRV0 pin (Pin 2) or the IDRV1 pin (Pin 3) to VCC through a resistor. The inflow current to the IDRV pin is multiplied by 10 times inside the IC, and flows as the output stage idling current. The IDRV pins have internal 50kΩ resistors. When the drive current setting switching pin DRVCNT (Pin 16) input logic is low, the inflow current to the IDRV pin is set according to the current set by the IDRV0 pin (Pin 2). When high, the inflow current to the IDRV pin is set according to the current set by the IDRV1 pin (Pin 3). The above-mentioned inflow current to the IDRV pin can be calculated as follows. IIDRV = (VCC – VBE × 2)/(RIDRV + 50kΩ) = (15 – 1.46)/270kΩ = 50.1μA Here, VCC = 15V, VBE = 0.73V (typ.), and RIDRV = 220kΩ. The small signal output impedance at this time can be calculated as follows. ROUT = (26mV/(10 × IIDRV))/2 = (26mV/501μA)/2 = 26Ω 2. Sink Current for CCD with Open Source Output The sink current of the IN pin (Pin 10) can be set by connecting the ISF0 pin (Pin 6) or the ISF1 pin (Pin 7) to VCC through a resistor. This sink current can be used as the CCD output stage source follower drive current. The inflow current to the ISF pin is multiplied by 58 times inside the IC, and flows as the sink current. The ISF pins have internal 50kΩ resistors. When the CCD source follower output sink current setting switching pin SFCNT (Pin 1) input logic is low, the inflow current to the ISF pin is set according to the current set by the ISF0 pin (Pin 6). When high, the inflow current to the ISF pin is set according to the current set by the ISF1 pin (Pin 7). The above-mentioned inflow current to the ISF pin can be calculated as follows. IISF = (VCC – VBE × 2)/(RISF + 50kΩ) = (15 – 1.46)/270kΩ = 50.1μA Here, VCC = 15V, VBE = 0.73V (typ.), and RISF = 220kΩ. The sink current at this time can be calculated as follows. Isink = 58 × IISF = 2.9mA Note) This IC operation depends on IDRV and ISF. This specification is described based on IDRV of 220kΩ when VCC = 15V. However , set it to 180kΩ to occur the same current when using under the condition that VCC = 13V. [IDRV and ISF vs external resistor] Current (μA) 90 68 50 35 26 Unit When VCC = 15V 100 150 220 330 470 kΩ When VCC = 13V 78 120 180 270 390 kΩ -8- CXA3741AUR Example of Representative Characteristics (Upper side) I/O voltage range vs. IDRV pin setting resistance (Lower side) I/O voltage range vs. IDRV pin setting resistance VCC – 0 5.0 Ta = 25˚C Ta = 25˚C 4.5 0.5 4.0 1.0 I/O voltage [V] I/O voltage [V] 3.5 1.5 VCC = 13V VCC = 15V 2.0 2.5 3.0 VCC = 15V 2.5 VCC = 13V 2.0 1.5 3.0 1.0 3.5 0.5 4.0 0 0 50 100 150 200 250 300 0 350 50 IDRV pin setting resistance [kΩ] 200 250 300 350 Sink current vs. ISF pin setting resistance 4.0 5.0 Ta = 25˚C, RIDRV = 220kΩ, VIN = VCC – 5V Ta = 25˚C, VIN = VCC – 5V 4.5 3.5 4.0 3.0 Sink current [mA] Current consumption [mA] 150 IDRV pin setting resistance [kΩ] Current consumption vs. IDRV pin setting resistance 2.5 VCC = 15V 2.0 VCC = 13V 1.5 3.5 3.0 VCC = 15V 2.5 VCC = 13V 2.0 1.5 1.0 1.0 0.5 0.5 0 0 0 50 100 150 200 250 300 0 350 IDRV pin setting resistance [kΩ] 50 100 150 200 250 300 350 ISF pin setting resistance [kΩ] Current consumption vs. Supply voltage Current consumption vs. Operating temperature 2.2 2.2 Ta = 25˚C, RISF0, 1 = GND, RIDRV0 = 220kΩ, RIDRV1 = GND, VIN = VCC – 5V 2.0 Current consumption [mA] 2.0 Current consumption [mA] 100 1.8 1.6 1.4 1.2 1.0 VCC = 15V, RISF0, 1 = GND, RIDRV0 = 220kΩ, RIDRV1 = GND, VIN = VCC – 5V 1.8 1.6 1.4 1.2 1.0 0.8 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 Supply voltage [V] 0.8 –50 –25 0 25 50 Operating temperature [˚C] -9- 75 100 CXA3741AUR I/O offset voltage vs. Supply voltage I/O offset voltage vs. Operating temperature 20.0 20.0 VCC = 15V, RISF0, 1 = GND, RIDRV0 = 220kΩ, RIDRV1 = GND, VIN = VCC – 5V 10.0 10.0 I/O offset voltage [mV] I/O offset voltage [mV] Ta = 25˚C, RISF0, 1 = GND, RIDRV0 = 220kΩ, RIDRV1 = GND, VIN = VCC – 5V 0.0 –10.0 –20.0 9.0 0.0 –10.0 –20.0 –50 10.0 11.0 12.0 13.0 14.0 15.0 16.0 Supply voltage [V] Input bias current vs. Supply voltage Ta = 25˚C, RISF0, 1 = GND, RIDRV0 = 220kΩ, RIDRV1 = GND, VIN = VCC – 5V 75 100 VCC = 15V, RISF0, 1 = GND, RIDRV0 = 220kΩ, RIDRV1 = GND, VIN = VCC – 5V 3.0 1.0 0.0 –1.0 –2.0 2.0 1.0 0.0 –1.0 –2.0 –3.0 –3.0 –4.0 –4.0 –5.0 –50 10.0 11.0 12.0 13.0 14.0 15.0 16.0 –25 0 25 50 75 100 Operating temperature [˚C] Supply voltage [V] Sink current vs. Supply voltage Sink current vs. Operating temperature 3.5 3.4 Ta = 25˚C, RISF0, 1 = GND, RIDRV0 = 220kΩ, RIDRV1 = GND, VIN = VCC – 5V 3.2 Sink current [mA] 3.0 Sink current [mA] 50 Input bias current vs. Operating temperature 4.0 2.0 –5.0 9.0 25 5.0 Input bias current [µA] Input bias current [µA] 3.0 0 Operating temperature [˚C] 5.0 4.0 –25 2.5 VCC = 15V, RISF0, 1 = GND, RIDRV0 = 220kΩ, RIDRV1 = GND, VIN = VCC – 5V 3 2.8 2.0 2.6 1.5 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 Supply voltage [V] 2.4 –50 –25 0 25 50 Operating temperature [˚C] - 10 - 75 100 CXA3741AUR Tr and Tf vs. Supply voltage Tr and Tf vs. Operating temperature 6.0 4.0 3.5 5.0 Tf 4.0 Tr and Tf [ns] Tr and Tf [ns] 3.0 Tf 3.0 2.0 1.0 0 10.0 Tr Ta = 25˚C, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 11.0 12.0 13.0 14.0 Tr 2.5 2.0 1.5 1.0 0.5 15.0 0 –50 16.0 Supply voltage [V] 1.75 1.50 1.50 I/O delay time [ns] 1.75 1.25 1.00 0.75 Ta = 25˚C, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 11.0 12.0 13.0 14.0 25 50 75 100 VCC = 15V, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 1.25 1.00 0.75 0.50 0.25 15.0 16.0 0 –50 –25 0 25 50 Supply voltage [V] Operating temperature [˚C] Positive pulse response Negative pulse response 0.2V/div 0 10.0 0 I/O delay time vs. Operating temperature 2.00 0.2V/div I/O delay time [ns] I/O delay time vs. Supply voltage 0.25 –25 Operating temperature [˚C] 2.00 0.50 VCC = 15V, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 100 VCC = 15V, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω Input rise, fall time = 2.0ns T Input 75 Output T 10.0V 10.0V T T Output Input VCC = 15V, RIDRV = 220kΩ, CL = 20pF, RL = 15Ω Input rise, fall time = 2.0ns Ch1 200mVΩ Ch2 200mVΩ M 1.00ns Ch1 10.0V 1.0ns/div - 11 - Ch1 200mVΩ Ch2 200mVΩ M 1.00ns Ch1 10.0V 1.0ns/div CXA3741AUR Application Circuit 1 (when using CCD with open source output) 470kΩ SFCNT IDRV0 IDRV1 GND 1000pF 220kΩ 4 3 2 1 0.1µF VCC ISF0 5 16 Current Mirror 6 220kΩ 15 DRVCNT GND Current Mirror ISF1 7 14 8 13 OUT 470kΩ NC 12 NC 11 GND GND 10 IN 9 15V NC GND CCD Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. - 12 - CDS/ADC CXA3741AUR Application Circuit 2 (when using CCD with internal current source) 470kΩ SFCNT IDRV0 IDRV1 GND 1000pF 220kΩ 4 3 2 1 0.1µF VCC ISF0 5 16 Current Mirror 6 15 DRVCNT GND Current Mirror ISF1 7 14 8 13 NC NC 12 NC GND 11 GND 10 IN 9 15V OUT GND CCD Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. - 13 - CDS/ADC CXA3741AUR Notes On Handling Provide the widest GND pattern possible on the board. Use a 1000pF (recommended) ceramic capacitor and a 0.1μF (recommended) ceramic capacitor in parallel for the bypass capacitor connected between the power supply and GND, and connect them as close to the IC pins as possible. Load capacitance causes the input/output wiring response to worsen and results in noise. Use the short wiring layout, and shield it with GND. When the output pin (Pin 14) is shorted to either the power supply or GND, an overcurrent may flow to the IC and damage it. When the input pin (Pin 10) is shorted to GND, an overcurrent may flow to the internal parasitic elements and damage them. - 14 - CXA3741AUR Package Outline (Unit: mm) 16PIN UQFN (PLASTIC) x4 0.1 S 0.4 ± 0.1 2.3 12 0.55 ± 0.05 0.9 9 13 C A-B C 4-R0.2 A B 16 26 0. 5 1 0.14 2.3 8 4 0.4 0.18 PIN 1 INDEX Thermal Die Pad 0.07 0.25 0.05 M S C A-B S 0.05 Solder Plating + 0.09 0.14 – 0.03 + 0.09 0.25 – 0.03 MAX0.02 S S TERMINAL SECTION PACKAGE STRUCTURE Note:Cutting burr of lead are 0.05mm MAX. PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.01g SONY CODE UQFN-16P-01 LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL - 15 - SPEC. COPPER ALLOY SOLDER COMPOSITION Sn-Bi Bi:1-4wt% PLATING THICKNESS 5-18μm Sony Corporation