SSC P4SMA62A

P4SMAX
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
PRODUCT SUMMARY
Peak Pulse Power 400W
Breakdown Voltage 6.8 to 550V
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance with
IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in accordance with
IEC1000-4-4 (IEC801-4)
Low profile package with built-in strain relief for surface
mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
400W peak pulse power capability with a 10/1000us waveform, repetition rate (duty cycle): 0.01% (300W above 91V)
Very Fast response time
High temperature soldering guaranteed: 250°C/10 seconds
at terminals
MECANICAL DATA
Case: JEDEC DO-214AC molded plastic over passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the cathode,
which is positive with respect to the anode under normal TVS
operation
Mounting Position: Any
Weight: 0.002 oz., 0.064 g
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics
apply in both directions.
Pb-free; RoHS-compliant
04/13/2007 Rev.1.00
www.SiliconStandard.com
1
P4SMAX
MAXIMUM RATINGS AND CHARACTERISTICS
o
(TA= 25 C unless otherwise noted.)
Parameter
Peak pulse power dissipation with a 10/1000us waveform
(Fig. 1)
Peak pulse current with a 10/1000us waveform
(1)
(Fig. 3)
Symbol
Value
Unit
PPPM
400
W
(1)(2)
IPPM
See Next Table
A
PM(AV)
1.0
W
Peak forward surge current, 8.3ms single half sine-wave
uni-directional only (2)
IFSM
40
A
Thermal resistance junction to ambient air (3)
RθJA
120
o
C/W
RθJL
30
o
C/W
TJ, TSTG
-55 to +150
Power dissipation on infinite heatsink, TA=50oC
Thermal resistance junction to leads
Operating junction and storage temperature range
Notes:
o
C
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25 C per Fig. 2. Rating is 300W above 91V.
2. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
3. Mounted on minimum recommended pad layout
04/13/2007 Rev.1.00
o
www.SiliconStandard.com
2
P4SMAX
ELECTRICAL CHARACTERISTICS
o
(Ratings at 25 C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only)
Device marking
co d e
Breakdow n voltage
V(BR)
(Volts) (1)
Max.
Test
current
at IT
(mA)
Stand-off
voltage
VWM
(Volts)
Maximum
reverse
leakage
at VWM
ID(3)
(uA)
Maximum
peak pulse
current
IPPM(2)
(A)
Maximum
clamping
voltage at
IPPM
VC (Volts)
Maximum
temperature
coefficient
of V(BR)
(% / oC)
0.057
Device type
UNI
BI
Min.
P4SMA6.8A
6V 8A
6V 8C
6.45
7.14
10
5.80
1000
38.1
10.5
P4SMA7.5A
7V 5A
7V 5C
7.13
7.88
10
6.40
500
35.4
11.3
0.061
P4SMA8.2A
8V 2A
8V 2C
7.79
8.61
10
7.02
200
33.1
12.1
0.065
P4SMA9.1A
9V 1A
9V 1C
8.65
9.55
1.0
7.78
50
29.9
13.4
0.068
P4SMA10A
10A
10C
9.50
10.5
1.0
8.55
10
27.6
14.5
0.073
P4SMA11A
11A
11C
10.5
11.6
1.0
9.40
5.0
25.6
15.6
0.075
P4SMA12A
12A
12C
11.4
12.6
1.0
10.2
1.0
24.0
16.7
0.078
P4SMA13A
13A
13C
12.4
13.7
1.0
11.1
1.0
22.0
18.2
0.081
P4SMA15A
15A
15C
14.3
15.8
1.0
12.8
1.0
18.9
21.2
0.084
P4SMA16A
16A
16C
15.2
16.8
1.0
13.6
1.0
17.8
22.5
0.086
P4SMA18A
18A
18C
17.1
18.9
1.0
15.3
1.0
15.9
25.2
0.088
P4SMA20A
20A
20C
19.0
21.0
1.0
17.1
1.0
14.4
27.7
0.090
P4SMA22A
22A
22C
20.9
23.1
1.0
18.8
1.0
13.1
30.6
0.092
P4SMA24A
24A
24C
22.8
25.2
1.0
20.5
1.0
12.0
33.2
0.094
P4SMA27A
27A
27C
25.7
28.4
1.0
23.1
1.0
10.7
37.5
0.096
P4SMA30A
30A
30C
28.5
31.5
1.0
25.6
1.0
9.7
41.4
0.097
P4SMA33A
33A
33C
31.4
34.7
1.0
28.2
1.0
8.8
45.7
0.098
P4SMA36A
36A
36C
34.2
37.8
1.0
30.8
1.0
8.0
49.9
0.099
P4SMA39A
39A
39C
37.1
41.0
1.0
33.3
1.0
7.4
53.9
0.100
P4SMA43A
43A
43C
40.9
45.2
1.0
36.8
1.0
6.7
59.3
0.101
P4SMA47A
47A
47C
44.7
49.4
1.0
40.2
1.0
6.2
64.8
0.101
P4SMA51A
51A
51C
48.5
53.6
1.0
43.6
1.0
5.7
70.1
0.102
P4SMA56A
56A
56C
53.2
58.8
1.0
47.8
1.0
5.2
77.0
0.103
P4SMA62A
62A
62C
58.9
65.1
1.0
53.0
1.0
4.7
85.0
0.104
P4SMA68A
68A
68C
64.6
71.4
1.0
58.1
1.0
4.3
92.0
0.104
P4SMA75A
75A
75C
71.3
78.8
1.0
64.1
1.0
3.9
104
0.105
P4SMA82A
82A
82C
77.9
86.1
1.0
70.1
1.0
3.5
113
0.105
P4SMA91A
91A
91C
86.5
95.5
1.0
77.8
1.0
3.2
125
0.106
P4SMA100A
100A
100C
95.0
105
1.0
85.5
1.0
2.2
137
0.106
P4SMA110A
110A
110C
105
116
1.0
94.0
1.0
2.0
152
0.107
P4SMA120A
120A
120C
114
126
1.0
102
1.0
1.8
165
0.107
P4SMA130A
130A
130C
124
137
1.0
111
1.0
1.7
179
0.107
P4SMA150A
150A
150C
143
158
1.0
128
1.0
1.4
207
0.106
P4SMA160A
160A
160C
152
168
1.0
136
1.0
1.4
219
0.108
P4SMA170A
170A
170C
162
179
1.0
145
1.0
1.3
234
0.108
P4SMA180A
180A
180C
171
189
1.0
154
1.0
1.2
246
0.108
P4SMA200A
200A
200C
190
210
1.0
171
1.0
1.1
274
0.108
P4SMA220A
220A
220C
209
231
1.0
185
1.0
0.9
328
0.108
P4SMA250A
250A
250C
237
263
1.0
214
1.0
1.2
344
0.108
P4SMA300A
300A
300C
285
315
1.0
256
1.0
1.0
414
0.108
P4SMA350A
350A
350C
332
368
1.0
300
1.0
0.9
482
0.108
P4SMA400A
400A
400C
380
420
1.0
342
1.0
0.8
548
0.108
P4SMA440A
440A
440C
418
462
1.0
376
1.0
0.7
602
0.108
P4SMA480A
480A
480C
456
504
1.0
408
1.0
0.6
658
0.108
P4SMA510A
510A
510C
485
535
1.0
434
1.0
0.6
698
0.108
P4SMA530A
530A
530C
503.5
556.5
1.0
477
1.0
0.6
725
0.108
P4SMA540A
540A
540C
513
567
1.0
459
1.0
0.5
740
0.108
P4SMA550A
550A
550C
522.5
577.5
1.0
495
1.0
0.5
760
0.108
Notes:
04/13/2007 Rev.1.00
1. V(BR) measured after IT applied for 300us, IT=square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. All terms and symbols are consistent with ANSI/IEEE CA62.35
4. For bidirectional types with VR 10 Volts and less, the ID limit is doubled
www.SiliconStandard.com
3
P4SMAX
RATINGS AND CHARACTERISTIC CURVES
o
(TA=25 C unless otherwise noted)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
04/13/2007 Rev.1.00
www.SiliconStandard.com
4