SSC SMBJ180A

SMBJ Series
Transient Voltage Suppressors
PRODUCT SUMMARY
Stand-off Voltage ratings from 5.0V to 440V
Peak pulse power 600W in SMB surface-mount package
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low profile package with built-in strain relief for surface-mount
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
Peak pulse power capability of 600W with a 10/1000us waveform,
repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
260°C for 10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AA (SMB) molded plastic over passivated chip
Terminals: Matte-Sn plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the cathode, which
is positive with respect to the anode under normal TVS operation.
Mounting position: Any
Weight: 0.003oz., 0.093g
Pb-free; RoHS-compliant
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Peak pulse power dissipation with
a 10/1000us waveform (1,2) (see Fig. 1)
Peak pulse current with a 10/1000us waveform
(1)
Peak forward surge current, 8.3ms single half sine-wave
uni-directional only (2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Notes:
Value
Unit
P PPM
Minimum 600
W
IPPM
See Next Table
A
IFSM
100
A
RθJA
100
°C/W
RθJL
20
°C/W
TJ, TSTG
-55 to +150
°C
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2.
2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
3. Mounted on minimum recommended pad layout
9/21/2006 Rev.4.01
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SMBJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only)
Device marking
co d e
Stand-off
voltage
VWM
(Volts)
Maximum
reverse
leakage
at VWM
ID(3)
(uA)
Maximum
peak pulse
surge
current
IPPM(2)
(A)
Maximum
clamping
voltage
at IPPM
VC (Volts)
9.6
Device Type
UNI
BI
Min.
Max.
Test
current
at IT
(mA)
SMBJ5.0
KD
AD
6.40
7.82
10
5.0
800
62.5
KE
AE
6.40
7.07
10
5.0
800
65.2
9.2
SMBJ6.0
KF
AF
6.67
8.15
10
6.0
800
52.6
11.4
SMBJ5.0A
(5)
SMBJ6.0A
KG
AG
6.67
7.37
10
6.0
800
58.3
10.3
SMBJ6.5
KH
AH
7.22
8.82
10
6.5
500
48.8
12.3
SMBJ6.5A
KK
AK
7.22
7.98
10
6.5
500
53.6
11.2
SMBJ7.0
KL
AL
7.78
9.51
10
7.0
200
45.1
13.3
12.0
SMBJ7.0A
KM
AM
7.78
8.60
10
7.0
200
50.0
SMBJ7.5
KN
AN
8.33
10.2
1.0
7.5
100
42.0
14.3
SMBJ7.5A
KP
AP
8.33
9.21
1.0
7.5
100
46.5
12.9
SMBJ8.0
KQ
AQ
8.89
10.9
1.0
8.0
50
40.0
15.0
SMBJ8.0A
KR
AR
8.89
9.83
1.0
8.0
50
44.1
13.6
SMBJ8.5
KS
AS
9.44
11.5
1.0
8.5
20
37.7
15.9
SMBJ8.5A
KT
AT
9.44
10.4
1.0
8.5
20
41.7
14.4
SMBJ9.0
KU
AU
10.0
12.2
1.0
9.0
10
35.5
16.9
SMBJ9.0A
KV
AV
10.0
11.1
1.0
9.0
10
39.0
15.4
SMBJ10
KW
AW
11.1
13.6
1.0
10
5.0
31.9
18.8
SMBJ10A
KX
AX
11.1
12.3
1.0
10
5.0
35.3
17.0
SMBJ11
KY
AY
12.2
14.9
1.0
11
5.0
29.9
20.1
SMBJ11A
KZ
AZ
12.2
13.5
1.0
11
5.0
33.0
18.2
SMBJ12
LD
BD
13.3
16.3
1.0
12
5.0
27.3
22.0
SMBJ12A
LE
BE
13.3
14.7
1.0
12
5.0
30.2
19.9
SMBJ13
LF
BF
14.4
17.6
1.0
13
1.0
25.2
23.8
SMBJ13A
LG
BG
14.4
15.9
1.0
13
1.0
27.9
21.5
SMBJ14
LH
BH
15.6
19.1
1.0
14
1.0
23.3
25.8
SMBJ14A
LK
BK
15.6
17.2
1.0
14
1.0
25.9
23.2
SMBJ15
LL
BL
16.7
20.4
1.0
15
1.0
22.3
26.9
SMBJ15A
LM
BM
16.7
18.5
1.0
15
1.0
24.6
24.4
SMBJ16
LN
BN
17.8
21.8
1.0
16
1.0
20.8
28.8
SMBJ16A
LP
BP
17.8
19.7
1.0
16
1.0
23.1
26.0
SMBJ17
LQ
BQ
18.9
23.1
1.0
17
1.0
19.7
30.5
SMBJ17A
LR
BR
18.9
20.9
1.0
17
1.0
21.7
27.6
SMBJ18
LS
BS
20.0
24.4
1.0
18
1.0
18.6
32.2
SMBJ18A
LT
BT
20.0
22.1
1.0
18
1.0
20.5
29.2
SMBJ20
LU
BU
22.2
27.1
1.0
20
1.0
16.8
35.8
SMBJ20A
LV
BV
22.2
24.5
1.0
20
1.0
18.5
32.4
SMBJ22
LW
BW
24.4
29.8
1.0
22
1.0
15.2
39.4
SMBJ22A
LX
BX
24.4
26.9
1.0
22
1.0
16.9
35.5
SMBJ24
LY
BY
26.7
32.6
1.0
24
1.0
14.0
43.0
SMBJ24A
LZ
BZ
26.7
29.5
1.0
24
1.0
15.4
38.9
SMBJ26
MD
CD
28.9
35.3
1.0
26
1.0
12.9
46.6
SMBJ26A
ME
CE
28.9
31.9
1.0
26
1.0
14.3
42.1
SMBJ28
MF
CF
31.1
38.0
1.0
28
1.0
12.0
50.0
SMBJ28A
MG
CG
31.1
34.4
1.0
28
1.0
13.2
45.4
SMBJ30
MH
CH
33.3
40.7
1.0
30
1.0
11.2
53.5
SMBJ30A
MK
CK
33.3
36.8
1.0
30
1.0
12.4
48.4
Notes:
9/21/2006 Rev.4.01
Breakdow n voltage
V(BR)
(Volts) (1)
1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For the bidirectional SMBJ5.0CA, the maximum V(BR) is 7.25V.
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SMBJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only)
Device marking
co d e
Stand-off
voltage
VWM
(Volts)
Maximum
reverse
leakage
at VWM
ID(3)
(uA)
Maximum
peak pulse
surge
current
IPPM(2)
(A)
Maximum
clamping
voltage
at IPPM
VC
(Volts)
Device type
UNI
BI
Min.
Max.
Test
current
at IT
(mA)
SMBJ33
ML
CL
36.7
44.9
1.0
33
1.0
10.2
59.0
SMBJ33A
MM
CM
36.7
40.6
1.0
33
1.0
11.3
53.3
SMBJ36
MN
CN
40.0
48.9
1.0
36
1.0
9.3
64.3
SMBJ36A
MP
CP
40.0
44.2
1.0
36
1.0
10.3
58.1
SMBJ40
MQ
CQ
44.4
54.3
1.0
40
1.0
8.4
71.4
SMBJ40A
MR
CR
44.4
49.1
1.0
40
1.0
9.3
64.5
SMBJ43
MS
CS
47.8
58.4
1.0
43
1.0
7.8
76.7
SMBJ43A
MT
CT
47.8
52.8
1.0
43
1.0
8.6
69.4
SMBJ45
MU
CU
50.0
61.1
1.0
45
1.0
7.5
80.3
SMBJ45A
MV
CV
50.0
55.3
1.0
45
1.0
8.3
72.7
SMBJ48
MW
CW
53.3
65.1
1.0
48
1.0
7.0
85.5
77.4
SMBJ48A
MX
CX
53.3
58.9
1.0
48
1.0
7.8
SMBJ51
MY
CY
56.7
69.3
1.0
51
1.0
6.6
91.1
SMBJ51A
MZ
CZ
56.7
62.7
1.0
51
1.0
7.3
82.4
SMBJ54
ND
DD
60.0
73.3
1.0
54
1.0
6.2
96.3
SMBJ54A
NE
DE
60.0
66.3
1.0
54
1.0
6.9
87.1
SMBJ58
NF
DF
64.4
78.7
1.0
58
1.0
5.8
103
SMBJ58A
NG
DG
64.4
71.2
1.0
58
1.0
6.4
93.6
SMBJ60
NH
DH
66.7
81.5
1.0
60
1.0
5.6
107
SMBJ60A
NK
DK
66.7
73.7
1.0
60
1.0
6.2
96.8
SMBJ64
NL
DL
71.1
86.9
1.0
64
1.0
5.3
114
SMBJ64A
NM
DM
71.1
78.6
1.0
64
1.0
5.8
103
SMBJ70
NN
DN
77.8
95.1
1.0
70
1.0
4.8
125
SMBJ70A
NP
DP
77.8
86.0
1.0
70
1.0
5.3
113
SMBJ75
NQ
DQ
83.3
102
1.0
75
1.0
4.5
134
SMBJ75A
NR
DR
83.3
92.1
1.0
75
1.0
5.0
121
SMBJ78
NS
DS
86.7
106
1.0
78
1.0
4.3
139
126
SMBJ78A
NT
DT
86.7
95.8
1.0
78
1.0
4.8
SMBJ85
NU
DU
94.4
115
1.0
85
1.0
4.0
151
SMBJ85A
NV
DV
94.4
104
1.0
85
1.0
4.4
137
160
SMBJ90
NW
DW
100
122
1.0
90
1.0
3.8
SMBJ90A
NX
DX
100
111
1.0
90
1.0
4.1
146
SMBJ100
NY
DY
111
136
1.0
100
1.0
3.4
179
SMBJ100A
NZ
DZ
111
123
1.0
100
1.0
3.7
162
SMBJ110
PD
FD
122
149
1.0
110
1.0
3.1
196
SMBJ110A
PE
FE
122
135
1.0
110
1.0
3.4
177
SMBJ120
PF
FF
133
163
1.0
120
1.0
2.8
214
SMBJ120A
PG
FG
133
147
1.0
120
1.0
3.1
193
SMBJ130
PH
FH
144
176
1.0
130
1.0
2.6
231
SMBJ130A
PK
FK
144
159
1.0
130
1.0
2.9
209
268
SMBJ150
PL
FL
167
204
1.0
150
1.0
2.2
SMBJ150A
PM
FM
167
185
1.0
150
1.0
2.5
243
SMBJ160
PN
FN
178
218
1.0
160
1.0
2.1
287
259
SMBJ160A
PP
FP
178
197
1.0
160
1.0
2.3
SMBJ170
PQ
FQ
189
231
1.0
170
1.0
2.0
304
SMBJ170A
PR
FR
189
209
1.0
170
1.0
2.2
275
292
SMBJ180A
PT
FT
201
222
1.0
180
1.0
2.1
SMBJ200A
PV
FV
224
247
1.0
200
1.0
1.9
324
SMBJ220A
PX
FX
246
272
1.0
220
1.0
1.7
356
SMBJ250A
PZ
FZ
279
309
1.0
250
1.0
1.5
405
SMBJ300A
QE
GE
335
371
1.0
300
1.0
1.3
486
SMBJ350A
QG
GG
391
432
1.0
350
1.0
1.1
567
SMBJ400A
QK
GK
447
494
1.0
400
1.0
0.9
648
SMBJ440A
QM
GM
492
543
1.0
440
1.0
0.9
713
Notes:
9/21/2006 Rev.4.01
Breakdow n voltage
V(BR)
(Volts) (1)
1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the VBR is +10%
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SMBJ Series
RATINGS AND CHARACTERISTIC CURVES
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/21/2006 Rev.4.01
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