SST SST29EE010_05

1 Mbit (128K x8) Page-Write EEPROM
SST29EE010 / SST29VE010
SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories
Data Sheet
FEATURES:
• Single Voltage Read and Write Operations
– 4.5-5.5V for SST29EE010
– 2.7-3.6V for SST29VE010
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
– 4.5-5.5V operation: 70 and 90 ns
– 2.7-3.6V operation: 150 and 200 ns
• Latched Address and Data
• Automatic Write Timing
– Internal VPP Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
Software Operation
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST29EE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/VE010 conform to JEDEC standard
pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/
VE010 provide a typical Byte-Write time of 39 µsec. The
entire memory, i.e., 128 Kbyte, can be written page-bypage in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write,
the SST29EE/VE010 have on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and
tested for a wide spectrum of applications, the SST29EE/
VE010 are offered with a guaranteed Page-Write endurance of 10,000 cycles. Data retention is rated at greater
than 100 years.
©2005 Silicon Storage Technology, Inc.
S71061-11-000
9/05
1
The SST29EE/VE010 are suited for applications that
require convenient and economical updating of program, configuration, or data memory. For all system
applications, the SST29EE/VE010 significantly
improve performance and reliability, while lowering
power consumption. The SST29EE/VE010 improve
flexibility while lowering the cost for program, data, and
configuration storage applications.
To meet high density, surface mount requirements, the
SST29EE/VE010 are offered in 32-lead PLCC and 32-lead
TSOP packages. A 600-mil, 32-pin PDIP package is also
available. See Figures 1, 2, and 3 for pin assignments.
Device Operation
The SST Page-Write EEPROM offers in-circuit electrical
write capability. The SST29EE/VE010 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program transparently to the user. The SST29EE/VE010 have industry
standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/VE010
are compatible with industry standard EEPROM pinouts
and functionality.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Read
consists of a specific three-byte load sequence that allows
writing to the selected page and will leave the SST29EE/
VE010 protected at the end of the Page-Write. The pageload cycle consists of loading 1 to 128 bytes of data into the
page buffer. The internal Write cycle consists of the TBLCO
time-out and the write timer operation. During the Write
operation, the only valid reads are Data# Polling and Toggle Bit.
The Read operations of the SST29EE/VE010 are controlled by CE# and OE#, both have to be low for the system
to obtain data from the outputs. CE# is used for device
selection. When CE# is high, the chip is deselected and
only standby power is consumed. OE# is the output control
and is used to gate data from the output pins. The data bus
is in high impedance state when either CE# or OE# is high.
Refer to the Read cycle timing diagram for further details
(Figure 4).
The Page-Write operation allows the loading of up to 128
bytes of data into the page buffer of the SST29EE/VE010
before the initiation of the internal Write cycle. During the
internal Write cycle, all the data in the page buffer is written
simultaneously into the memory array. Hence, the PageWrite feature of SST29EE/VE010 allow the entire memory
to be written in as little as 5 seconds. During the internal
Write cycle, the host is free to perform additional tasks,
such as to fetch data from other locations in the system to
set up the write to the next page. In each Page-Write operation, all the bytes that are loaded into the page buffer must
have the same page address, i.e. A7 through A16. Any byte
not loaded with user data will be written to FFH.
Write
The Page-Write to the SST29EE/VE010 should always
use the JEDEC Standard Software Data Protection (SDP)
three-byte command sequence. The SST29EE/VE010
contain the optional JEDEC approved Software Data Protection scheme. SST recommends that SDP always be
enabled, thus, the description of the Write operations will
be given using the SDP enabled format. The three-byte
SDP Enable and SDP Write commands are identical;
therefore, any time a SDP Write command is issued,
Software Data Protection is automatically assured. The
first time the three-byte SDP command is given, the device
becomes SDP enabled. Subsequent issuance of the same
command bypasses the data protection for the page being
written. At the end of the desired Page-Write, the entire
device remains protected. For additional descriptions,
please see the application notes, The Proper Use of
JEDEC Standard Software Data Protection and Protecting
Against Unintentional Writes When Using Single Power
Supply Flash Memories.
See Figures 5 and 6 for the Page-Write cycle timing diagrams. If after the completion of the three-byte SDP load
sequence or the initial byte-load cycle, the host loads a second byte into the page buffer within a byte-load cycle time
(TBLC) of 100 µs, the SST29EE/VE010 will stay in the
page-load cycle. Additional bytes are then loaded consecutively. The page-load cycle will be terminated if no additional byte is loaded into the page buffer within 200 µs
(TBLCO) from the last byte-load cycle, i.e., no subsequent
WE# or CE# high-to-low transition after the last rising edge
of WE# or CE#. Data in the page buffer can be changed by
a subsequent byte-load cycle. The page-load period can
continue indefinitely, as long as the host continues to load
the device within the byte-load cycle time of 100 µs. The
page to be loaded is determined by the page address of
the last byte loaded.
The Write operation consists of three steps. Step 1 is the
three-byte load sequence for Software Data Protection.
Step 2 is the byte-load cycle to a page buffer of the
SST29EE/VE010. Steps 1 and 2 use the same timing for
both operations. Step 3 is an internally controlled Write
cycle for writing the data loaded in the page buffer into the
memory array for nonvolatile storage. During both the SDP
three-byte load sequence and the byte-load cycle, the
addresses are latched by the falling edge of either CE# or
WE#, whichever occurs last. The data is latched by the rising edge of either CE# or WE#, whichever occurs first. The
internal Write cycle is initiated by the TBLCO timer after the
rising edge of WE# or CE#, whichever occurs first. The
Write cycle, once initiated, will continue to completion, typically within 5 ms. See Figures 5 and 6 for WE# and CE#
controlled Page-Write cycle timing diagrams and Figures
15 and 17 for flowcharts.
Software Chip-Erase
The SST29EE/VE010 provide a Chip-Erase operation,
which allows the user to simultaneously clear the entire
memory array to the “1” state. This is useful when the entire
device must be quickly erased.
The Software Chip-Erase operation is initiated by using a
specific six-byte load sequence. After the load sequence,
the device enters into an internally timed cycle similar to the
Write cycle. During the Erase operation, the only valid read
is Toggle Bit. See Table 4 for the load sequence, Figure 10
for timing diagram, and Figure 19 for the flowchart.
The Write operation has three functional cycles: the Software Data Protection load sequence, the page-load cycle,
and the internal Write cycle. The Software Data Protection
©2005 Silicon Storage Technology, Inc.
S71061-11-000
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9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Write Operation Status Detection
Hardware Data Protection
The SST29EE/VE010 provide two software means to
detect the completion of a Write cycle, in order to optimize
the system Write cycle time. The software detection
includes two status bits: Data# Polling (DQ7) and Toggle Bit
(DQ6). The End-of-Write detection mode is enabled after
the rising WE# or CE# whichever occurs first, which initiates the internal Write cycle.
Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a Write cycle.
VDD Power Up/Down Detection: The Write operation is
inhibited when VDD is less than 2.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or
Toggle Bit read may be simultaneous with the completion
of the Write cycle. If this occurs, the system may possibly
get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious
rejection, if an erroneous result occurs, the software routine
should include a loop to read the accessed location an
additional two (2) times. If both reads are valid, then the
device has completed the Write cycle, otherwise the rejection is valid.
Software Data Protection (SDP)
The SST29EE/VE010 provide the JEDEC approved
optional Software Data Protection scheme for all data alteration operations, i.e., Write and Chip-Erase. With this
scheme, any Write operation requires the inclusion of a
series of three-byte load operations to precede the data
loading operation. The three-byte load sequence is used to
initiate the Write cycle, providing optimal protection from
inadvertent Write operations, e.g., during the system
power-up or power-down. The SST29EE/VE010 are
shipped with the Software Data Protection disabled.
Data# Polling (DQ7)
The software protection scheme can be enabled by applying a three-byte sequence to the device, during a pageload cycle (Figures 5 and 6). The device will then be automatically set into the data protect mode. Any subsequent
Write operation will require the preceding three-byte
sequence. See Table 4 for the specific software command
codes and Figures 5 and 6 for the timing diagrams. To set
the device into the unprotected mode, a six-byte sequence
is required. See Table 4 for the specific codes and Figure 9
for the timing diagram. If a write is attempted while SDP is
enabled the device will be in a non-accessible state for
~300 µs. SST recommends Software Data Protection
always be enabled. See Figure 17 for flowcharts.
When the SST29EE/VE010 are in the internal Write cycle,
any attempt to read DQ7 of the last byte loaded during the
byte-load cycle will receive the complement of the true
data. Once the Write cycle is completed, DQ7 will show
true data. Note that even though DQ7 may have valid data
immediately following the completion of an internal Write
operation, the remaining data outputs may still be invalid:
valid data on the entire data bus will appear in subsequent
successive Read cycles after an interval of 1 µs. See Figure 7 for Data# Polling timing diagram and Figure 16 for a
flowchart.
Toggle Bit (DQ6)
The SST29EE/VE010 Software Data Protection is a global
command, protecting all pages in the entire memory array
once enabled. Therefore using SDP for a single PageWrite will enable SDP for the entire array. Single pages by
themselves cannot be SDP enabled.
During the internal Write cycle, any consecutive attempts to
read DQ6 will produce alternating ‘0’s and ‘1’s, i.e. toggling
between 0 and 1. When the Write cycle is completed, the
toggling will stop. The device is then ready for the next
operation. See Figure 8 for Toggle Bit timing diagram and
Figure 16 for a flowchart. The initial read of the Toggle Bit
will typically be a “1”.
Single power supply reprogrammable nonvolatile memories may be unintentionally altered. SST strongly recommends that Software Data Protection (SDP) always be
enabled. The SST29EE/VE010 should be programmed
using the SDP command sequence.
Data Protection
The SST29EE/VE010 provide both hardware and software
features to protect nonvolatile data from inadvertent writes.
©2005 Silicon Storage Technology, Inc.
S71061-11-000
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9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TABLE 1: PRODUCT IDENTIFICATION
Please refer to the following Application Notes for more
information on using SDP:
•
•
Protecting Against Unintentional Writes When
Using Single Power Supply Flash Memories
The Proper Use of JEDEC Standard Software
Data Protection
Address
Data
0000H
BFH
SST29EE010
0001H
07H
SST29VE010
0001H
08H
Manufacturer’s ID
Device ID
T1.4 1061
Product Identification
Product Identification Mode Exit
The Product Identification mode identifies the device
as the SST29EE/VE010 and manufacturer as SST.
This mode is accessed via software. For details, see
Table 4, Figure 11 for the software ID entry and read
timing diagram and Figure 18, for the ID entry command sequence flowchart.
In order to return to the standard Read mode, the Software
Product Identification mode must be exited. Exiting is
accomplished by issuing the Software ID Exit (reset) operation, which returns the device to the Read operation. The
Reset operation may also be used to reset the device to the
Read mode after an inadvertent transient condition that
apparently causes the device to behave abnormally, e.g.,
not read correctly. See Table 4 for software command
codes, Figure 12 for timing waveform, and Figure 18 for a
flowchart.
FUNCTIONAL BLOCK DIAGRAM
X-Decoder
A16 - A0
SuperFlash
Memory
Address Buffer & Latches
Y-Decoder and Page Latches
CE#
OE#
WE#
Control Logic
I/O Buffers and Data Latches
DQ7 - DQ0
©2005 Silicon Storage Technology, Inc.
1061 B1.0
S71061-11-000
4
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
NC
VDD
4
3
2
1
32 31 30
29
NC
A16
A6
A15
5
A12
A7
WE#
Data Sheet
A14
6
28
A13
A5
7
27
A8
A4
8
26
A9
A3
9
25
A11
A2
10
24
OE#
A1
11
23
A10
A0
12
22
CE#
DQ0
13
21
14 15 16 17 18 19 20
DQ7
32-lead PLCC
Top View
DQ6
DQ5
DQ4
VSS
DQ3
DQ2
DQ1
1061 32-plcc P01.0
FIGURE 1: PIN ASSIGNMENTS FOR 32-LEAD PLCC
A11
A9
A8
A13
A14
NC
WE#
VDD
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Standard Pinout
Top View
Die Up
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
1061 32-tsop F02.0
FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
32-pin
6
PDIP
7
8 Top View
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VDD
WE#
NC
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
1061 32-pdip P03.0
FIGURE 3: PIN ASSIGNMENTS FOR 32-PIN PDIP
©2005 Silicon Storage Technology, Inc.
S71061-11-000
5
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TABLE 2: PIN DESCRIPTION
Symbol
Pin Name
Functions
A16-A7
Row Address Inputs
To provide memory addresses. Row addresses define a page for a Write cycle.
A6-A0
Column Address Inputs
Column Addresses are toggled to load page data
DQ7-DQ0
Data Input/output
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
CE#
Chip Enable
To activate the device when CE# is low.
OE#
Output Enable
To gate the data output buffers.
WE#
Write Enable
To control the Write operations.
VDD
Power Supply
To provide:
VSS
Ground
NC
No Connection
5.0V supply (4.5-5.5V) for SST29EE010
2.7V supply (2.7-3.6V) for SST29VE010
Unconnected pins.
T2.3 1061
TABLE 3: OPERATION MODES SELECTION
Mode
CE#
Read
Page-Write
Standby
Write Inhibit
OE#
WE#
DQ
Address
VIL
VIL
VIL
VIH
VIH
DOUT
AIN
VIL
DIN
VIH
X1
AIN
X
VIL
X
High Z
X
X
High Z/ DOUT
X
X
X
VIH
High Z/ DOUT
X
VIL
VIH
VIL
DIN
AIN, See Table 4
Software Mode
VIL
VIH
VIL
Manufacturer’s ID (BFH)
Device ID2
See Table 4
SDP Enable Mode
VIL
VIH
VIL
See Table 4
SDP Disable Mode
VIL
VIH
VIL
See Table 4
Software Chip-Erase
Product Identification
T3.4 1061
1. X can be VIL or VIH, but no other value.
2. Device ID = 07H for SST29EE010 and 08H for SST29VE010
©2005 Silicon Storage Technology, Inc.
S71061-11-000
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9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TABLE 4: SOFTWARE COMMAND SEQUENCE
Command
Sequence
1st Bus
Write Cycle
Addr1
Data
2nd Bus
Write Cycle
Addr1
Data
3rd Bus
Write Cycle
Addr1
4th Bus
Write Cycle
Data
Addr1
Data
Data
5th Bus
Write Cycle
6th Bus
Write Cycle
Addr1
Data
Addr1
Data
5555H
AAH
2AAAH
55H
5555H
A0H
Addr2
Software Chip-Erase3 5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Software ID Entry4,5
5555H
AAH
2AAAH
55H
5555H
90H
Software ID Exit
5555H
AAH
2AAAH
55H
5555H
F0H
Alternate
Software ID Entry6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
60H
Software
Data Protect Enable
& Page-Write
T4.3 1061
1. Address format A14-A0 (Hex), Addresses A15 and A16 can be VIL or VIH, but no other value.
2. Page-Write consists of loading up to 128 Bytes (A6-A0)
3. The software Chip-Erase function is not supported by the industrial temperature part.
Please contact SST if you require this function for an industrial temperature part.
4. The device does not remain in Software Product ID mode if powered down.
5. With A14-A1 = 0; SST Manufacturer’s ID = BFH, is read with A0 = 0,
SST29EE010 Device ID = 07H, is read with A0 = 1
SST29VE010 Device ID = 08H, is read with A0 = 1
6. Alternate six-byte Software Product ID command code
Note: This product supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code
sequence. For new designs, SST recommends that the three-byte command code sequence be used.
©2005 Silicon Storage Technology, Inc.
S71061-11-000
7
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE FOR SST29EE010
Range
Commercial
Industrial
Ambient Temp
VDD
0°C to +70°C
4.5-5.5V
-40°C to +85°C
4.5-5.5V
OPERATING RANGE FOR SST29VE010
Range
Commercial
Industrial
Ambient Temp
VDD
0°C to +70°C
2.7-3.6V
-40°C to +85°C
2.7-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . 10 ns
Output Load . . . . . . . . . . . . . . . . . . . . . 1 TTL Gate and CL = 100 pF
See Figures 13 and 14
©2005 Silicon Storage Technology, Inc.
S71061-11-000
8
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 4.5-5.5V FOR SST29EE010
Limits
Symbol
Parameter
IDD
Power Supply Current
Min
Max
Units
Test Conditions
Address input=VILT/VIHT, at f=1/TRC Min,
VDD=VDD Max
Read
30
mA
CE#=OE#=VIL, WE#=VIH, all I/Os open
Program and Erase
50
mA
CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
ISB1
Standby VDD Current
(TTL input)
3
mA
CE#=OE#=WE#=VIH, VDD=VDD Max
ISB2
Standby VDD Current
(CMOS input)
50
µA
CE#=OE#=WE#=VDD -0.3V, VDD=VDD Max
ILI
Input Leakage Current
1
µA
VIN =GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
10
µA
VOUT =GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
0.8
2.0
0.4
2.4
V
VDD=VDD Min
V
VDD=VDD Max
V
IOL=2.1 mA, VDD=VDD Min
V
IOH=-400 µA, VDD=VDD Min
T5.4 1061
TABLE 6: DC OPERATING CHARACTERISTICS VDD = 2.7-3.0V FOR SST29VE010
Limits
Symbol
Parameter
IDD
Power Supply Current
Min
Max
Units
Test Conditions
Address input=VILT/VIHT, at f=1/TRC Min,
VDD=VDD Max
Read
12
mA
CE#=OE#=VIL, WE#=VIH, all I/Os open
Program and Erase
15
mA
CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
ISB1
Standby VDD Current
(TTL input)
1
mA
CE#=OE#=WE#=VIH, VDD=VDD Max
ISB2
Standby VDD Current
(CMOS input)
15
µA
CE#=OE#=WE#=VDD -0.3V, VDD=VDD Max
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
10
µA
VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.8
V
VDD=VDD Min
VIH
Input High Voltage
V
VDD=VDD Max
VOL
Output Low Voltage
0.4
V
IOL=100 µA, VDD=VDD Min
VOH
Output High Voltage
V
IOH=-100 µA, VDD=VDD Min
2.0
2.4
T6.5 1061
©2005 Silicon Storage Technology, Inc.
S71061-11-000
9
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
Power-up to Read Operation
100
µs
Power-up to Write Operation
5
ms
TPU-WRITE
1
T7.1 1061
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
Input Capacitance
VIN = 0V
6 pF
CIN
1
T8.0 1061
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: RELIABILITY CHARACTERISTICS
Symbol
NEND
1
Parameter
Minimum Specification
Units
Endurance
Test Method
10,000
Cycles
JEDEC Standard A117
TDR1
Data Retention
100
Years
JEDEC Standard A103
ILTH1
Latch Up
100
mA
JEDEC Standard 78
T9.5 1061
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
S71061-11-000
10
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
AC CHARACTERISTICS
TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE010
SST29EE010-70
Min
Max
SST29EE010-90
Symbol
Parameter
TRC
Read Cycle Time
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
30
40
ns
TCLZ1
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
20
30
ns
TOHZ1
OE# High to High-Z Output
20
30
ns
TOH1
Output Hold from Address Change
70
Min
Max
90
0
Units
ns
0
ns
T10.2 1061
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29VE010
SST29VE010-150
Max
SST29VE010-200
Symbol
Parameter
Min
Min
Max
TRC
Read Cycle Time
150
TCE
Chip Enable Access Time
150
TAA
Address Access Time
150
200
ns
TOE
Output Enable Access Time
80
100
ns
TCLZ1
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
200
Units
ns
200
ns
1
CE# High to High-Z Output
50
50
ns
TOHZ1
OE# High to High-Z Output
50
50
ns
TOH1
Output Hold from Address Change
TCHZ
0
0
ns
T11.2 1061
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
S71061-11-000
11
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TABLE 12: PAGE-WRITE CYCLE TIMING PARAMETERS
SST29EE010
Symbol
Parameter
TWC
Write Cycle (Erase and Program)
TAS
Address Setup Time
0
0
ns
TAH
Address Hold Time
50
70
ns
TCS
WE# and CE# Setup Time
0
0
ns
TCH
WE# and CE# Hold Time
0
0
ns
TOES
OE# High Setup Time
0
0
ns
TOEH
OE# High Hold Time
0
0
ns
TCP
CE# Pulse Width
70
120
ns
TWP
WE# Pulse Width
70
120
ns
TDS
Data Setup Time
35
50
ns
TDH1
Data Hold Time
0
0
ns
TBLC
1
Min
Max
SST29LE/VE010
Min
10
100
0.05
Max
Units
10
ms
Byte Load Cycle Time
0.05
TBLCO1
Byte Load Cycle Time
200
100
TIDA1
Software ID Access and Exit Time
10
10
µs
TSCE
Software Chip-Erase
20
20
ms
200
µs
µs
T12.5 1061
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
S71061-11-000
12
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TRC
TAA
ADDRESS A16-0
TCE
CE#
TOE
OE#
TOHZ
TOLZ
VIH
WE#
HIGH-Z
TCHZ
TOH
TCLZ
HIGH-Z
DATA VALID
DQ 7-0
DATA VALID
1061 F04.0
FIGURE 4: READ CYCLE TIMING DIAGRAM
Three-Byte Sequence for
Enabling SDP
ADDRESS A16-0
5555
2AAA
TAH
TAS
5555
TCS
TCH
CE#
TOES
TOEH
OE#
TWP
TBLCO
TBLC
WE#
TDH
DQ 7-0
AA
55
SW0
SW1
A0
DATA VALID
TWC
TDS
SW2
BYTE 0
BYTE 1
BYTE 127
1061 F05.0
FIGURE 5: WE# CONTROLLED PAGE-WRITE CYCLE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71061-11-000
13
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Three-Byte Sequence for
Enabling SDP
ADDRESS A16-0
5555
2AAA
TAH
TAS
5555
TCP
TBLCO
TBLC
CE#
TOES
TOEH
OE#
TCS
TCH
WE#
TDH
DQ 7-0
AA
55
SW0
SW1
A0
DATA VALID
TWC
TDS
SW2
BYTE 0
BYTE 1
BYTE 127
1061 F06.0
FIGURE 6: CE# CONTROLLED PAGE-WRITE CYCLE TIMING DIAGRAM
ADDRESS A16-0
TCE
CE#
TOES
TOEH
OE#
TOE
WE#
DQ 7
D
D#
D#
D
TWC + TBLCO
1061 F07.0
FIGURE 7: DATA# POLLING TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71061-11-000
14
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
ADDRESS A16-0
TCE
CE#
TOEH
TOES
TOE
OE#
WE#
DQ6
TWC + TBLCO
TWO READ CYCLES
WITH SAME OUTPUTS
1061 F08.0
FIGURE 8: TOGGLE BIT TIMING DIAGRAM
Six-Byte Sequence for Disabling
Software Data Protection
ADDRESS A14-0
DQ 7-0
5555
AA
2AAA
5555
55
5555
80
2AAA
AA
TWC
5555
55
20
CE#
OE#
TBLCO
TWP
WE#
TBLC
SW0
SW1
SW2
SW3
SW4
SW5
1061 F09.0
FIGURE 9: SOFTWARE DATA PROTECT DISABLE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71061-11-000
15
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Six-Byte Code for Software Chip-Erase
ADDRESS A14-0
5555
DQ 7-0
2AAA
AA
5555
55
5555
80
2AAA
AA
TSCE
5555
55
10
CE#
OE#
TBLCO
TWP
WE#
TBLC
SW0
SW1
SW2
SW3
SW4
SW5
1061 F10.0
FIGURE 10: SOFTWARE CHIP-ERASE TIMING DIAGRAM
Three-Byte Sequence
for Software ID Entry
ADDRESS A14-0
5555
5555
2AAA
0000
0001
TAA
DQ 7-0
AA
55
BF
90
DEVICE ID
TIDA
CE#
OE#
TWP
WE#
TBLC
SW0
SW1
SW2
DEVICE ID = 07H for SST29EE010
= 08H for SST29VE010
1061 F11.1
FIGURE 11: SOFTWARE ID ENTRY AND READ
©2005 Silicon Storage Technology, Inc.
S71061-11-000
16
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Three-Byte Sequence
for Software ID Exit and Reset
ADDRESS A14-0
DQ 7-0
5555
AA
2AAA
5555
55
F0
TIDA
CE#
OE#
TWP
WE#
TBLC
SW0
SW1
SW2
1061 F12.0
FIGURE 12: SOFTWARE ID EXIT AND RESET
©2005 Silicon Storage Technology, Inc.
S71061-11-000
17
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
VIHT
VHT
INPUT
VHT
REFERENCE POINTS
OUTPUT
VLT
VLT
VILT
1061 F13.0
AC test inputs are driven at VIHT (2.4V) for a logic “1” and VILT (0.4 V) for a logic “0”. Measurement reference points for
inputs and outputs are VHT (2.0 V) and VLT (0.8 V). Input rise and fall times (10% ↔ 90%) are <10 ns.
Note: VHT - VHIGH Test
VLT - VLOW Test
VIHT - VINPUT HIGH Test
VILT - VINPUT LOW Test
FIGURE 13: AC INPUT/OUTPUT REFERENCE WAVEFORMS
VDD
TO TESTER
RL HIGH
TO DUT
CL
RL LOW
1061 F14.0
FIGURE 14: A TEST LOAD EXAMPLE
©2005 Silicon Storage Technology, Inc.
S71061-11-000
18
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Start
Software Data
Protect Write
Command
See Figure 17
Set Page
Address
Set Byte
Address = 0
Load Byte
Data
Increment
Byte Address
By 1
No
Byte
Address =
128?
Yes
Wait TBLCO
Wait for end of
Write (TWC,
Data# Polling bit
or Toggle bit
operation)
Write
Completed
1061 F15.0
FIGURE 15: WRITE ALGORITHM
©2005 Silicon Storage Technology, Inc.
S71061-11-000
19
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Internal Timer
Toggle Bit
Data# Polling
Page-Write
Initiated
Page-Write
Initiated
Page-Write
Initiated
Wait TWC
Read a byte
from page
Read DQ7
(Data for last
byte loaded)
Write
Completed
Read same
byte
No
Is DQ7 =
true data?
Yes
No
Does DQ6
match?
Write
Completed
Yes
Write
Completed
1061 F16.0
FIGURE 16: WAIT OPTIONS
©2005 Silicon Storage Technology, Inc.
S71061-11-000
20
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Software Data Protect Enable
Command Sequence
Software Data Protect
Disable Command Sequence
Write data: AAH
Address: 5555H
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 55H
Address: 2AAAH
Write data: A0H
Address: 5555H
Write data: 80H
Address: 5555H
Load 0 to
128 Bytes of
page data
Optional Page Load
Operation
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Wait TBLCO
Write data: 20H
Address: 5555H
Wait TWC
Wait TBLCO
SDP Enabled
Wait TWC
SDP Disabled
1061 F17.0
FIGURE 17: SOFTWARE DATA PROTECTION FLOWCHARTS
©2005 Silicon Storage Technology, Inc.
21
S71061-11-000
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Software Product ID Entry
Command Sequence
Software Product ID Exit &
Reset Command Sequence
Write data: AAH
Address: 5555H
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 55H
Address: 2AAAH
Write data: 90H
Address: 5555H
Write data: F0H
Address: 5555H
Pause 10 µs
Pause 10 µs
Read Software ID
Return to normal
operation
1061 F18.0
FIGURE 18: SOFTWARE PRODUCT COMMAND FLOWCHARTS
©2005 Silicon Storage Technology, Inc.
S71061-11-000
22
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Software Chip-Erase
Command Sequence
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 10H
Address: 5555H
Wait TSCE
Chip-Erase
to FFH
1061 F19.0
FIGURE 19: SOFTWARE CHIP-ERASE COMMAND CODES
©2005 Silicon Storage Technology, Inc.
S71061-11-000
23
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
PRODUCT ORDERING INFORMATION
SST
29
XX
xE
010
XX XXXX
- 70
- XXX
-
4C
XX
NH
- XXX
E
X
Environmental Attribute
E1 = non-Pb
Package Modifier
H = 32 leads or pins
Package Type
N = PLCC
E = TSOP (type 1, die up, 8mm x 20mm)
P = PDIP
W = TSOP (type 1, die up, 8mm x 14mm)
Temperature Range
C = Commercial = 0°C to +70°C
I = Industrial = -40°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Read Access Speed
200 = 200 ns
150 = 150 ns
90 = 90 ns
70 = 70 ns
Device Density
010 = 1 Mbit
Function
E = Page-Write
Voltage
E = 4.5-5.5V
V = 2.7-3.6V
Product Series
29 = Page-Write Flash
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
©2005 Silicon Storage Technology, Inc.
S71061-11-000
24
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
Valid combinations for SST29EE010
SST29EE010-70-4C-NH
SST29EE010-70-4C-NHE
SST29EE010-90-4C-NH
SST29EE010-90-4C-NHE
SST29EE010-70-4C-WH
SST29EE010-70-4C-WHE
SST29EE010-90-4C-WH
SST29EE010-90-4C-WHE
SST29EE010-70-4C-EH
SST29EE010-70-4C-EHE
SST29EE010-90-4C-EH
SST29EE010-90-4C-EHE
SST29EE010-70-4I-NH
SST29EE010-70-4I-NHE
SST29EE010-70-4I-WH
SST29EE010-70-4I-WHE
SST29EE010-70-4I-EH
SST29EE010-70-4I-EHE
SST29EE010-70-4C-PH
SST29EE010-70-4C-PHE
SST29EE010-90-4C-PH
Valid combinations for SST29VE010
SST29VE010-150-4C-NH
SST29VE010-150-4C-NHE
SST29VE010-200-4C-NH
SST29VE010-200-4C-NHE
SST29VE010-150-4C-WH
SST29VE010-150-4C-WHE
SST29VE010-200-4C-WH
SST29VE010-200-4C-WHE
SST29VE010-150-4C-EH
SST29VE010-150-4C-EHE
SST29VE010-200-4C-EH
SST29VE010-200-4C-EHE
SST29VE010-150-4I-NH
SST29VE010-150-4I-NHE
SST29VE010-200-4I-NH
SST29VE010-200-4I-NHE
SST29VE010-150-4I-WH
SST29VE010-150-4I-WHE
SST29VE010-200-4I-WH
SST29VE010-200-4I-WHE
SST29VE010-150-4I-EH
SST29VE010-150-4I-EHE
SST29VE010-200-4I-EH
SST29VE010-200-4I-EHE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
Note: The software Chip-Erase function is not supported by the industrial temperature part.
Please contact SST if this function is required in an industrial temperature part.
©2005 Silicon Storage Technology, Inc.
S71061-11-000
25
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
PACKAGING DIAGRAMS
TOP VIEW
Optional
Pin #1
Identifier .048
.042
SIDE VIEW
.495
.485
.453
.447
2
1
32
.112
.106
.020 R.
MAX.
.029 x 30˚
.023
.040 R.
.030
.042
.048
.595 .553
.585 .547
BOTTOM VIEW
.021
.013
.400 .530
BSC .490
.032
.026
.050
BSC
.015 Min.
.095
.075
.050
BSC
.140
.125
.032
.026
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
4. Coplanarity: 4 mils.
32-plcc-NH-3
32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC)
SST PACKAGE CODE: NH
©2005 Silicon Storage Technology, Inc.
S71061-11-000
26
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
1.05
0.95
Pin # 1 Identifier
0.50
BSC
8.10
7.90
0.27
0.17
0.15
0.05
12.50
12.30
DETAIL
1.20
max.
0.70
0.50
14.20
13.80
0˚- 5˚
0.70
0.50
Note:
1. Complies with JEDEC publication 95 MO-142 BA dimensions,
although some dimensions may be more stringent.
1mm
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
32-tsop-WH-7
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 14MM
SST PACKAGE CODE: WH
©2005 Silicon Storage Technology, Inc.
S71061-11-000
27
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
1.05
0.95
Pin # 1 Identifier
0.50
BSC
8.10
7.90
0.27
0.17
0.15
0.05
18.50
18.30
DETAIL
1.20
max.
0.70
0.50
20.20
19.80
0˚- 5˚
0.70
0.50
Note:
1.Complies with JEDEC publication 95 MO-142 BD dimensions,
although some dimensions may be more stringent.
2.All linear dimensions are in millimeters (max/min).
3.Coplanarity: 0.1 mm
4.Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25mm between leads.
1mm
32-tsop-EH-7
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 20MM
SST PACKAGE CODE: EH
©2005 Silicon Storage Technology, Inc.
S71061-11-000
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9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
32
CL
Pin #1 Identifier
1
1.655
1.645
.075
.065
7˚
4 PLCS.
Base
Plane
Seating
Plane
.625
.600
.550
.530
.200
.170
.050
.015
.080
.070
.065
.045
.022
.016
.100 BSC
.150
.120
0˚
15˚
.012
.008
.600 BSC
Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.
32-pdip-PH-3
32-PIN PLASTIC DUAL IN-LINE PINS (PDIP)
SST PACKAGE CODE: PH
©2005 Silicon Storage Technology, Inc.
S71061-11-000
29
9/05
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
Data Sheet
TABLE 13: REVISION HISTORY
Revision
Description
Date
07
•
2002 Data Book
May 2002
08
•
•
Removed 200 ns Read Access Time for SST29LE010
Clarified IDD Write to be Program and Erase in Tables 5 and 6 on page 9
Mar 2003
09
•
•
2004 Data Book
Added non-Pb MPNs and removed footnote (See page 25)
Nov 2003
10
•
Added 150 ns MPNs for SST29VE010
Mar 2004
11
•
Removed 3V device and associated MPNs: refer to EOL Product Data Sheet
S71061(01)
Added non-Pb MPN for SST29EE010 PDIP
Added RoHS compliance information on page 1 and in the
“Product Ordering Information” on page 24
Updated the solder reflow temperature to the “Absolute Maximum Stress Ratings” on
page 8.
Sep 2005
•
•
•
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2005 Silicon Storage Technology, Inc.
S71061-11-000
30
9/05