UTC UT134F/G TRIAC TRIACS DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring highbidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SYMBOL 1 MT2 TO-126 G 1:MT1 2:MT2 3:GATE MT1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT V Repetitive peak off-state voltages UT134F/G-5 UT134F/G-6 UT134F/G-8 RMS on-state current full sine wave; Tmb ≤107 °C Non-repetitive peak on-state current (Full sine wave; Tj = 25 °C prior to surge) t = 20ms t = 16.7 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs T2+ G+ T2+ GT2- GT2- G+ Peak gate voltage Peak gate current Peak gate power Average gate power (over any 20 ms period) Storage temperature Operating junction temperature UTC VDRM IT(RMS) ITSM I2t dIT /dt VGM IGM PGM PG(AV) Tstg Tj 500 600* 800 4 25 27 3.1 50 50 50 10 A A A2s A/μs 5 2 5 0.5 -40 ~ 150 125 V A W W ℃ ℃ UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-008,B UTC UT134F/G TRIAC *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/µs. THERMAL RESISTANCES PARAMETER SYMBOL Thermal resistance Junction to mounting base Full cycle Half cycle Thermal resistance Junction to ambient (In free air) MIN TYP Rth j-mb MAX UNIT 3.0 3.7 K/W K/W K/W 100 Rth j-a STATIC CHARACTERISTICS (Tj=25°C, unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT UT134F UT134G Gate trigger current IGT VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ 5 8 11 30 25 25 25 70 50 50 50 100 IL VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ 7 16 5 7 20 30 20 30 30 45 30 45 5 1.4 0.7 0.4 15 Latching current Holding current On-state voltage Gate trigger voltage IH VT VGT Off-state leakage current ID VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj =125°C VD = VDRM(max) ; Tj = 125 °C 0.25 0.1 30 mA mA 1.7 1.5 mA V V V 0.5 mA DYNAMIC CHARACTERISTICS (Tj=25°C, unless otherwise stated) PARAMETER SYMBOL CONDITIONS Critical rate of rise of Off-state voltage dVD /dt VDM = 67% VDRM(max) ; Tj =125°C; exponential waveform; gate open circuit Critical rate of change of Commutating voltage dVcom/dt VDM=400V;Tj=95°C;IT(RMS)=4A; dIcom /dt =1.8A/ms; gate open circuit Gate controlled turn-on time UTC tgt ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/µs MIN UT134F UT134G 50 TYP MAX UNIT 200 250 V/µs 10 50 V/µs 2 µs UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-008,B UTC UT134F/G TRIAC TYPICAL CHARACTERISTICS Tmb(max)/C 8 Ptot/W 7 101 3 104 α=180 107 120 110 90 60 113 30 116 2 119 1 122 α 6 α 5 4 125 5 2 3 4 IT(RMS)/A Fig.1. Maximum on-state dissipation,Ptot,versus rms on-state current,IT(RMS)where α=conduction angle. 0 0 1 5 IT(RMS)/A 107℃ 4 3 2 1 0 -50 0 50 100 150 Tmb/C Fig.4. Maximum permissible rms current lT(RMS), versus mounting base temperature Tmb IT(RMS)/A ITSM/A 12 1000 ITSM IT 10 time T 8 Tj initial=25℃max 100 6 dIT/dt limit 4 T2-G+ quadrant 10 10us 100us 2 1ms 10ms 100ms 0 0.01 30 ITSM/A 1.6 ITSM IT 25 0.1 1 10 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50HZ;Tmb≦107℃ T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp, for sinusoidal currents,tp≦20ms VGT(Tj) VGT(25℃) 1.4 T 20 time 1.2 Tj initial=25℃max 15 1 10 0.8 5 0.6 0 0 10 100 1000 Number of cycles at 50Hz Fig3.Maximum Permissible non-repetitive peak on-state current ITSM,versus number of cycles,for sinusoidal currents,f=50HZ. UTC 0.4 -50 0 50 100 0 50 100 150 150 Tj/℃ Fig.6. Normalised gate trigger voltage . VGT(Tj)/VGT(25℃),versus junctiontemperature Tj UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-008,B UTC UT134F/G 3 TRIAC I GT(Tj) IGT(25℃) IT/A 12 T2+G+ T2+GT2-GT2-G+ 2.5 2 6 4 0.5 2 0 50 Tj/℃ 100 0 150 0 Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25℃),versus junction temperature Tj. 3 typ Vo=1.27V Rs=0.091Ohms 8 1 max Tj=25℃ 10 1.5 0 -50 Tj=125℃ 0.5 1 1.5 VT/V 2 2.5 3 Fig.10.Typical and maximum on-state characteristic. IL(Tj) IL (25℃) 10 Zth j-mb(K/W ) unidirectional 2.5 bidirectional 1 2 1.5 1 tp PD 0.1 0.5 t 0 -50 0 50 100 150 0.01 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp/s Tj/℃ Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. Fig.8.Normalised latching Current IL(Tj)/IL(25℃), versus junction temperature Tj IH(Tj) 3 IH (25℃) dVcom/dt(V/us) 1000 off-state dV/dt limit 2.5 UT134G 2 100 UT134F 1.5 1 10 0.5 dlcom /dt=5.1 A/ms 0 -50 0 50 100 150 Tj/℃ Fig. 9.Normalised holding current IH (Tj)/IH (25℃), versus junction temperature Tj. UTC 1 0 3.9 3 2.3 1.8 1.4 50 150 100 Tj/C Fig.12.Typical commutation dV/dt versus junction temperature,parameter commutation dlT/dt.The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dl T/dt UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-008,B UTC UT134F/G TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-008,B