IRF4N60 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switching applications such as Tighter VSD Specifications power supplies, converters, power motor controls and Avalanche Energy Specified bridge circuits. PIN CONFIGURATION SYMBOL D TO-220/TO-220FP SOU RCE DRAIN G ATE Top View G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation Symbol Value Unit A ID 4.0 IDM 18 VGS ±20 V VGSM ±40 V PD TO-220 W 96 TO-220FP 38 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к TJ, TSTG -55 to 150 к EAS 80 mJ șJC 1.70 к/W șJA 62 TL 300 (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds к Page 1 IRF4N60 POWER MOSFET ORDERING INFORMATION Part Number Package ....................IRF4N60..............................................TO-220 IRF4N60FP TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. CIRF4N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 600 Typ Max Units V Drain-Source Leakage Current (VDS =600 V, VGS = 0 V) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR -100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * RDS(on) Forward Transconductance (VDS = 50 V, ID = 2.0 A) * Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge mA 0.1 (VDD = 300 V, ID = 4.0 A, VGS = 10 V, RG = 9.1ȍ) * gFS 2.0 ................1.5...............2.4 2.5 ȍ mhos Ciss 520 730 Coss 125 180 pF pF Crss 8.0 20 pF td(on) 12 20 tr 7.0 10 ns ns td(off) 19 40 ns tf 10 20 ns 10 Qg 5.0 Qgs 2.7 nC nC Qgd 2.0 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Source Charge Gate-Drain Charge (VDS = 480 V, ID = 4.0 A, VGS = 10 V)* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 4.0 A, dIS/dt = 100A/µs) VSD 1.5 V ton ** ns trr 655 ns * Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2% ** Negligible, Dominated by circuit inductance Page 2 IRF4N60 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF4N60 POWER MOSFET PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 L1 A1 c e b e1 φ Side View Front View TO-220FP C I 0 R1 .5 0 0.1 8² 1 . R3 B J H Q D R1 .5 0 A A B C D E E G H I O P K J K 0 .6 R1 M N O P G Q b R b b1 b2 e N M b2 b1 e Front View R Side View Back View Page 4